Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation

Bai, Ruxue; Guo, Hongxia; Liu, Yitian; Li, Yangfan; Zhang, Fengqi; Ma, Wuying; Zhang, Hong; Ouyang, Xiaoping; Zhong, Xiangli

doi:10.1109/ted.2024.3449833

IEEE Trans. Electron Devices

2024

DOI: 10.1109/ted.2024.3449833

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Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation

Ruxue Bai,

Hongxia Guo,

Yitian Liu

et al.

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Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation

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