Abstract:This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST®) for CMOS compatible processing of vertical GaN power devices. The epitaxial stack contains a 5 \(\mu\)m thick drift layers with a Si doping density of 2x1016 cm− 3 and total threading dislocation density of 4x108 cm− 2. The thick drift layer requires fine-tuning of the epitaxial growth conditions to keep wafer bow under control and to avoid the formation of surface defects. D… Show more
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