2018
DOI: 10.1063/1.5026195
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Determination of thicknesses and temperatures of crystalline silicon wafers from optical measurements in the far infrared region

Abstract: Optical measurements of transmittance in the far infrared region performed on crystalline silicon wafers exhibit partially coherent interference effects appropriate for the determination of thicknesses of the wafers. The knowledge of accurate spectral and temperature dependencies of the optical constants of crystalline silicon in this spectral region is crucial for the determination of its thickness and vice versa. The recently published temperature dependent dispersion model of crystalline silicon is suitable… Show more

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Cited by 3 publications
(4 citation statements)
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“…2F), using the rigorous coupled-wave analysis method. For optical simulation of bioresorbable temperature sensor responses, the S 4 package also accounted for optical dispersion relations of silicon ( 49 ) and silicon dioxide ( 50 ), as well as the thermal expansion properties of each material ( 51 ).…”
Section: Methodsmentioning
confidence: 99%
“…2F), using the rigorous coupled-wave analysis method. For optical simulation of bioresorbable temperature sensor responses, the S 4 package also accounted for optical dispersion relations of silicon ( 49 ) and silicon dioxide ( 50 ), as well as the thermal expansion properties of each material ( 51 ).…”
Section: Methodsmentioning
confidence: 99%
“…These values are in a From the values of the quantity χ describing the quality of the fit it is evident that the obtained fit is worse than the fits in the first two columns. This is especially true for the fit of the Watan-abe et al data (χ = 0.275 for the 4-th fit in [12] and χ = 1.231 for the 2-nd fit). For this reason we added the fourth ABESF term in to the formula (20).…”
Section: Thermal Expansion Effectmentioning
confidence: 93%
“…Therefore it can be calculated by means of the integration over the Brillouin zone. As it was shown in [12,15,16], the temperature dependence of the linear thermal expansion can be modeled using the average Bose-Einstein statistical factors (ABESF). In this model the continuous distribution of phonons is represented by a small number of average phonons, and the linear thermal expansion is given as follows…”
Section: Thermal Expansion Effectmentioning
confidence: 99%
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