Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope

Ruíz, Facundo; Sun, Weidong; Pollak, Fred H.; Venkatraman, C.

doi:10.1063/1.122287

Cited by 82 publications

(43 citation statements)

References 10 publications

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“…Thus for thermal management of the device, it is important to know accurately the value of the thermal conductivity of metallisation and semiconductor subcontact region. Thermal conductivity investigations were performed using Scanning Thermal Microscopy (SThM), enabling to couple the topographic image with the thermal conductivity information [5]. To age the contacts they were annealed in air at temperatures up to 150 °C over a period of 300 hours.…”

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confidence: 99%

Study of long‐term stability of ohmic contacts to GaN

Kamińska

Gołaszewska

Piotrowska

et al. 2004

phys. stat. sol. (c)

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We report on low-resistivity thermally stable ohmic contacts to p-GaN using ZrN/ZrB 2 metallisation. Transport properties, thermal conductivity and long-term stability of contacts were examined. pGaN/ZrN/ZrB 2 contacts show excellent stability upon aging in air, indicating their suitability for longterm operation at temperatures up to 150 ºC.1 Introduction GaN's intrinsic properties such as wide bandgap, high thermal conductivity, high melting temperature, high breakdown voltage and high saturation velocity make it a material of choice for high temperature and high power electronic devices [1]. During the last decade, significant progress in both material and processing technologies as well as in the design of new device structures has been made. Now the most important and challenging problem is to master the reliability of GaN-based devices.In this paper we address the issue of long-term stability of ohmic contacts to GaN. Electrical contacts that are structurally stable at high temperature are the prerequisite for reliable operation of GaN electronic devices. Zr-based metallisation was chosen as a contact material because of high electrical conductivity, superior thermal stability and chemical resistance against corrosion, making it compatible with GaN. Zr/ZrN metallisation was reported effective in providing low-resistivity contacts to n-type GaN by depleting its superficial film from nitrogen, creating thus a highly doped subcontact region and a stable ZrN compound at the contact interface [2]. In our previous studies, ZrN/ZrB 2 metallisation was used for p-type GaN contacting purposes. The presence of Zr in the metallisation was a key factor for the formation of the ohmic contact by removal hydrogen from the subcontact layer and creation thereby a highly doped p + region [3]. Moreover, structural stability of ZrN/ZrB 2 metallisation deposited on GaN upon annealing up to 1100 °C in N 2 has been proven [4]. In the present study we have investigated the thermal conductivity of p-GaN/ZrN/ZrB 2 ohmic contacts and performed accelerated lifetime testing of these contacts. It is well established that efficient heat removal is critical to the performance of semiconductor devices. Thus for thermal management of the device, it is important to know accurately the value of the thermal conductivity of metallisation and semiconductor subcontact region. Thermal conductivity investigations were performed using Scanning Thermal Microscopy (SThM), enabling to couple the topographic image with the thermal conductivity information [5]. To age the contacts they were annealed in air at temperatures up to 150 °C over a period of 300 hours. The aging process was monitored by specific contact resistance measurements and compositional depth profiling of the contacts.

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confidence: 99%

Study of long‐term stability of ohmic contacts to GaN

Kamińska

Gołaszewska

Piotrowska

et al. 2004

phys. stat. sol. (c)

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“…By scanning a heated tip across the sample surface a spatial map of the thermal properties of the sample may be mapped out as localized heat transfer between the tip and sample surface changes the tip temperature. Many theoretical and instrumental studies have been devoted to the measurement of temperature and conductivity [4][5][6][7][8][9][10][11][12][13]. However, the results obtained depend strongly on the nature of the tip-surface contact, which is poorly defined [3,10].…”

Section: Introductionmentioning

confidence: 99%

Batch fabricated dual cantilever resistive probe for scanning thermal microscopy

Zhang

Dobson

Weaver

2011

Microelectronic Engineering

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Zhang, Y., Dobson, P. , and Weaver, J. (2011) AbstractIn this study dual cantilever resistive probes for scanning thermal microscopy (SThM) have been batch fabricated. In the dual probe, one is used as local heater and a second one nearby detects the thermal diffusivity at a microscopic scale. Various types of dual probes have been fabricated in one batch to allow experimental determination of the optimal sensor type for the measurement. Thermal scans with the dual cantilever probes have been performed in atmosphere, and contrast in thermal imaging indicating the difference of thermal conductivity is shown. Test of these probes under vacuum indicates strong thermal coupling through air between the two probes in the dual cantilever probes.

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“…Based on its unique properties, many applications of CNT have been proposed including quantum wires, tiny electronic devices [4,5], heterojunction devices, electron emitters [6], nanotube tips for scanning probe microscope [7], etc. One of the most intriguing applications of CNT is the polymer/CNT nanocomposites [8][9][10][11][12][13]. The superb mechanic property of CNT makes them ideal candidate as fillers in high strength, lightweight polymer composite.…”

Section: Introductionmentioning

confidence: 99%

“…The superb mechanic property of CNT makes them ideal candidate as fillers in high strength, lightweight polymer composite. Polymers such as epoxy [10], thermoplastics [11], gels [12], as well as Poly (methyl methacrylate) (PMMA) [13] have been used as the matrix. However, the developments in polymer/CNT nanocomposite has been limited by the problems with the dispersion of the fillers as well as the load transfer across the CNT polymer interface due to the atomically smooth CNT surface.…”

Section: Introductionmentioning

confidence: 99%

Structure and Properties of Carbon Nanotube Reinforced Nanocomposites

Khan

Ali

et al. 2002

43rd AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference

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Carbon nanotubes (CNT) possess many unique characteristics that promise to revolutionize the world of structural m aterials resulting in significant impact on our capability to build lighter, smaller and higher performance structures for aerospace and many other industrial applications. When the CNT are aligned, micromechanical studies showed the p otential of an order of magnitude i ncrease in mechanical properties comparing to the state of the art carbon fiber reinforced composites. The coelectrospinning process is introduced as a pathway to realize this potential by aligning and carrying the CNT in the form of nanocomposite fibrils; thus forming the precursor for linear, planar and 3D fiber assemblies for macrocomposites. In this study, SWNT were purified and dispersed in polyacrylonitrile solution for co-electrospinning into nanocomposite fibrils. The structure, composition and physical properties of these composite fibrils were characterized by Raman spectroscopy, TEM, AFM, and TGA.

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Determination of the thermal conductivity of diamond-like nanocomposite films using a scanning thermal microscope

Cited by 82 publications

References 10 publications

Study of long‐term stability of ohmic contacts to GaN

Study of long‐term stability of ohmic contacts to GaN

Batch fabricated dual cantilever resistive probe for scanning thermal microscopy

Structure and Properties of Carbon Nanotube Reinforced Nanocomposites

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