Solution-processed
polymeric semiconductor films are attracting
wide interest for applications in flexible electronics, wherein environmental
stability is still a big obstacle. In many polymeric thin-film electronic
devices, vertical phase separation has been observed, which leads
to film depth dependences of electronic properties. Here, a soft plasma-assisted
surface etching method to improve the environmental stability and
maintain the electronic properties of organic field-effect transistors
(OFETs) is proposed, by which the unwanted thin-film surface (exposed
to air) is selectively taken away upon soft plasma etching, and the
layer beneath the surface (subsurface) is preserved without any damage
to the subsurface’s structure or electronic function. Investigation
of frequently used polymeric semiconductors poly(3-hexylthiophene)
and poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4b′]dithiophen-2-yl)-alt [1,2,5]thiadiazolo[3,4-c]pyridine] shows that the crystallinity of the surface
layer is higher than that of the subsurface layer. However, for p-type
polymeric semiconductors, higher crystallinity usually leads to a
lower ionization energy and higher doping concentration during exposure
to air and thus a higher background conductivity, deteriorating the
switching-off capability of the organic field-effect transistors (OFETs).
Therefore, by removing this surface layer, the lifetime of OFETs in
air is effectively increased by over 50%.