Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Barjon, Julien; P, Desfonds; Pinault, M.‐A.; Kociniewski, T.; Jomard, François; Chevallier, J.

doi:10.1063/1.2735408

Cited by 41 publications

(34 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…: from the centre of the QDisk to about 5 nm away in both directions along the NW growth axis). This is very small when compared to the carrier diffusion in bulk GaN or AlN [54,40] or GaN nanowires, [64] revealing the strong carrier trapping capability of the QDisks. However in the present case, contrary to [40], a clear broadening in the spatial distribution of the detected signal arises at lower energy -a given QDisk appears broader on filtered map of smaller energy, indicating a link between excitation position and emission energy.…”

Section: Sample Experimental Methodsmentioning

confidence: 99%

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

et al. 2016

View full text Add to dashboard Cite

We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over 3 orders of magnitude, strong non-linearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4nm), the QDisk emission energy is observed to blue-shift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm), the blue-shift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 pA to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the 'efficiency droop' as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect. *

show abstract

Section: Sample Experimental Methodsmentioning

confidence: 99%

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

et al. 2016

View full text Add to dashboard Cite

show abstract

“…As could be expected, the incorporation of P is higher in the layer grown with 500ppm as confirmed by the amplitude of the P-bound exciton signal. This is corroborated as well by significant broadening of the spectral when comparing the right and left parts of Figure 4.On single crystal diamond one can quantify the substitutional phosphorous concentration found in the diamond layer from the ratio between the BE and FE luminescence intensities [17], but due to the presence of grain boundaries complementary analyses making use of spot selected CL are requested for a precise estimation on these microcrystalline films. Nevertheless, it is safe to conclude that the intensity of the CL BE peak confirms the behavior seen in the PC spectra, which showed that a higher PH 3 concentration in the gas phase leads to higher active P-incorporation in the obtained diamond layer.…”

Section: Cathodoluminescence Resultsmentioning

confidence: 52%

Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

et al. 2007

View full text Add to dashboard Cite

Phosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron backscattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

show abstract

“…Lett. 103, 042104 (2013) in SIMS measurements, [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] leading to systematic overestimates of the real width, similar to the case of silicon. 26 If this is the case, it is legitimate to ask how the layer thickness should be estimated from broadened SIMS profiles.…”

Section: -3mentioning

confidence: 94%

“…Doping level evaluation over micrometer-scale areas in diamond material can also be carried out by optical methods such as Raman 10 and FTIR. 11 Among these techniques, cathodoluminescence (CL) 12,13 is clearly the most sensitive 14 while ensuring a high spatial resolution since cross sectional analysis can be also carried out on FIB preparations. 15,16 However, the signal is too weak in heavily doped diamond to image the spatial distribution of dopants.…”

mentioning

confidence: 99%

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

Araújo

Alegre

Piñero

et al. 2013

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 1020 cm−3 were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p−/p++/p− multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

show abstract

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

Cited by 41 publications

References 20 publications

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires

Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

Contact Info

Product

Resources

About