Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature

Robert, Jean-Louis; Barjon, D.

doi:10.1002/pssa.19700030217

Phys. Stat. Sol. (a)

1970

DOI: 10.1002/pssa.19700030217

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Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature

Jean-Louis Robert

D. Barjon

Abstract: Effective mass calculations for two types of electrons in GaSb, as well as the separation energy ΔEc of the two minima of the conduction band and its variation with temperature are derived from galvanomagnetic measurements. Following data are obtained: m1 = = 0.048 m0, m2 = 0.24 m0, δEc = (77 − 0.2 T/deg) meV.

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Cited by 11 publications

References 10 publications

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Investigation of the conduction band in n‐type GaSb

Szlenk

Walukiewicz

1971

Physica Status Solidi (b)

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The specimens of n-type Te-doped GaSb crystals were prepared by the Bridgman method. The Hall coefficient and conductivity were measured in the temperature range between 100 and 400 O K using dc current and magnetic field technique. The specimens of intermediary shapes were measured by the Van der Pauw (1) method.The Hall coefficient does not change in the range of magnetic fields below 8. 5 me.The temperature dependences of d and R are presented in Fig. 1 and 2. H According to Sagar (2) the conduction band of GaSb has two, near-lying minima:an absolute minimum r a t the centre of the Brillouin zone and an upper minimum

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Investigation of the conduction band in n‐type GaSb

Szlenk

Walukiewicz

1971

Physica Status Solidi (b)

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Analysis of the two‐rand hall effect and magnetoresistance

Kwan¹,

Basinski²,

Woolley³

1971

Physica Status Solidi (b)

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Thc variation of the values of Hall coefficient R and resistance e as a function of magnetic field B is analysed for the case of an n-type semiconductor with electrons in two different sets of conduction band minima. It is shown that both eo/Ae and Ro/AR should be linear functions of B P and that the parameters of the separate bands can be determined from the slope and intercept values of such graphs. The appropriate choice of experimental parameters t o ensure the required accuracy of band parameters is discussed.La variation du cocfficient dc Hall R et de la rCsist8ivitC. e en fonction du champ magnktique 13 est analystk pour un semiconductcur du type-n avec les Olcctrons dans deux types de minima de la bandc de conduction. 11 est montr6 que eo/4e, ainsi que h',/AR, doit varier lin6aircmcnt en fonetion de B-2 c t que les parametres de chaque bande peuvent &re obtcnus L partir de la pente et de l'ordonnke A l'origine de ces courbes. I& choix approprik des diffbrents paranit'tres espkrimentaux pour assurer la precision nkccssaire dans la d6termination des paramiltres de bandcs est Bgalement discotk.

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Transport parameters of n-type GaSb

Kourkoutas

Bekris

Papaioannou

et al. 1984

Solid State Communications

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Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature

Cited by 11 publications

References 10 publications

Investigation of the conduction band in n‐type GaSb

Investigation of the conduction band in n‐type GaSb

Analysis of the two‐rand hall effect and magnetoresistance

Transport parameters of n-type GaSb

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