With photoluminescence experiments under high uniaxial stress in (11 1) crystallographic dmction it is possible to observe the inversion of the I? and L conduction bands of GaSb directly in the spectra a t 6.5 kbar. From the line shifts the uniaxial deformation potential constant of the L conduction band E, = (15 f 1) eV is determined. Also the energy separation between the two conduction bands at zero stress is obtained from the experimental data: AE = (93 f 3) meV.A donor level assosiated with the L conduction band is seen in the spectra at higher stresses. The ionisation energy of this donor is determined to El = 33 meV.