Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements

Goushcha, Alexander O.; Metzler, Richard A.; Hicks, Chris; Kharkyanen, V. N.; Berezetska, Natalja M.

doi:10.1117/12.528361

Cited by 3 publications

(2 citation statements)

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“…The measured peak responsivity of all three photodiodes is 0.436 ± 1 A/W at 820 nm. All obtained values are consistent with the reported behavior of silicon at room temperature [14,19,20]. When the wavelengths are higher than 820 nm, the energy of incident photons is not enough to excite electrons from the valence band to conduction band, which decreases the generated electron density; consequently, the sensitivity of the device declines.…”

Section: Resultssupporting

confidence: 89%

Fabrication and characterization of Si-PIN photodiodes

Doğanci¹,

Kaya²,

Aktağ³

et al. 2019

Turk J Phys

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In this work, characteristics of silicon-based p + type, intrinsic (I), n − type (Si-PIN) photodiodes with active area of 3.5 × 3.5 mm 2 , 5.0 × 5.0 mm 2 , or 7.0 × 7.0 mm 2 and their possible usage in optoelectronics were studied. The devices were fabricated in the Radiation Detector Application and Research Center (NÜRDAM) of Bolu Abant İzzet Baysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivity measurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environment at room temperature. The measured values of the dark current (I dc) and the capacitance of photodiodes were-6.97 to-19.10 nA and 23 to 61 pF at-5 V, respectively. The quantum efficiency measurements of the devices increased up to 66%. P responsivity was found to be 0.436 ± 1 mA/W at 820 nm. The results indicate that the I dc current and the performance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications and commercial usage.

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Section: Resultssupporting

confidence: 89%

Fabrication and characterization of Si-PIN photodiodes

Doğanci¹,

Kaya²,

Aktağ³

et al. 2019

Turk J Phys

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“…3. Small capacitance values are required for high sensitivity and high operational speed devices [9]. The capacitance value vs. reverse bias voltage dropped sharply between 0 V and -5 V initially.…”

Section: Results Of I-v and C-v Measurementmentioning

confidence: 99%

Electrical Characteristics and Alpha Particle Detection Performance of a Newly Developed Pin Photodiode

Yilmaz¹,

Doğanci²,

Ahmadov³

et al. 2020

RAP 2019 Conference Proceedings

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The Silicon PIN photodiodes (Si-PIN) with an active area of 5.0 x 5.0 mm 2 were designed and fabricated by using a conventional photolithography process at the Center of Nuclear Radiation Detectors Research and Application (NÜRDAM) for the investigation of electrical characteristics and alpha particle detection performance. To obtain the device electrical specifications, the current-voltage (I-V) and the capacitance-voltage (C-V) measurements were carried out in the photoconductive mode. The Si-PIN photodiode was then used to detect alpha particles from different radioactive sources in a vacuum at room temperature. Photodiode dark current and capacitance were measured and found to be -20 nA and 23pF, respectively, at -20 Volts (the operating voltage used during alpha particle detection). The possibilities of improving the parameters of the photodiode are discussed.

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Optical Detectors

Goushcha¹,

Tabbert²

2007

Springer Handbook of Lasers and Optics

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Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements

Cited by 3 publications

References 0 publications

Fabrication and characterization of Si-PIN photodiodes

Fabrication and characterization of Si-PIN photodiodes

Electrical Characteristics and Alpha Particle Detection Performance of a Newly Developed Pin Photodiode

Optical Detectors

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