Determination of the appropriate piezoelectric materials for various types of piezoelectric energy harvesters with high output power

Kim, Sun Woo; Lee, Tae Gon; Kim, Dae Hyeon; Lee, Ku Tak; Jung, Inki; Kang, Chong Yun; Han, Seung-Ho; Kang, Hyung‐Won; Nahm, Sahn

doi:10.1016/j.nanoen.2018.12.082

Cited by 43 publications

(37 citation statements)

References 43 publications

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“…However, the latter is beneficial for improving the operating stability of a piezoelectric device under high-power excitation conditions. 8,9 Although much progress has been made in the doping research, there are very few reports on the effects of substituted ions. According to thermodynamic theory, in perovskite oxide, the substituted ions should enter only the low-energy grain boundaries, because entering the lattice interstitial sites will cause structural instability.…”

Section: Introductionmentioning

confidence: 99%

“…In contrast, the Mn 3+ dopant replaces either Zr 4+ or Ti 4+ at the B ‐site and produces the opposite effect; the doping generates oxygen vacancies, thereby reducing the piezoelectric coefficient by the pinning domain wall movement. However, the latter is beneficial for improving the operating stability of a piezoelectric device under high‐power excitation conditions 8,9 . Although much progress has been made in the doping research, there are very few reports on the effects of substituted ions.…”

Section: Introductionmentioning

confidence: 99%

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Refreshing doping concept in perovskite piezoceramics: Composite modulation hidden behind lattice substitution

Hou

Zhao

et al. 2020

J Am Ceram Soc

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Chemical doping is favored by academia as well as industry because of its effectiveness in attuning to the properties of piezoceramics. Although significant progress has been made, few reports have focused on the role and overall effect of substituted ions. Based on the tendency of special crystals such as ZnO toward spontaneous growth, this study applies the concept of composite modulation to conventional doping; the CuO‐modified 0.2Pb(Zn1/3Nb2/3)O3‐0.8Pb(Zr1/2Ti1/2)O3 (PZN‐PZT) system has been used for verification of the proposed method. The results show that copper ions enter the perovskite matrix to specifically replace the zinc ions causing lattice distortion and increasing the rhombohedral phase (RP) content. Furthermore, the substituted zinc ions enter the grain boundaries and grow into a secondary phase ZnO, based on their spontaneous‐growth tendency; the induced heterogeneous interfacial effects lead to refinement of the domain size and enhancement of the interface polarization. The combined effects of the lattice substitution and composite modulation promote a significant improvement in the piezoelectric coefficient of the CuO‐modified PZN‐PZT system compared with its pure counterpart. The dual function of doping demonstrated in this study is expected to further contribute to the preparation and performance improvement of the other piezoelectric composites.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Refreshing doping concept in perovskite piezoceramics: Composite modulation hidden behind lattice substitution

Hou

Zhao

et al. 2020

J Am Ceram Soc

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“…When the metal substrate is only clamped to the exciter (type‐I PEH), mechanical energy is first developed in the supporting system of the PEH; then, a part of this mechanical energy is used to vibrate the piezoelectric materials that leads to the generation of the electrical energy (Figure 12c,d). [ 94 ] For the type‐II PEH, both the piezoelectric ceramic and metal plate are clamped (Figure 12e). Moreover, most of the applied mechanical stress is directly developed in the piezoelectric ceramic, and only a small portion of the mechanical stress is also developed in the metal substrate, as shown in Figure 12f.…”

Section: Fom Of Piezoelectric Materials For Pehmentioning

confidence: 99%

“…Moreover, most of the applied mechanical stress is directly developed in the piezoelectric ceramic, and only a small portion of the mechanical stress is also developed in the metal substrate, as shown in Figure 12f. [ 94 ] The FOM of the piezoelectric material also depends on the PEH type because the transition of the mechanical energy in the type‐I PEH is different from that in the type‐II PEH. Therefore, the type of PEH should also be considered to determine the FOM of the PEH piezoelectric materials.…”

Section: Fom Of Piezoelectric Materials For Pehmentioning

confidence: 99%

“…Four different piezoelectric ceramics with the compositions of 0.8(PbZr 0.51 Ti 0.49 )O 3 ‐0.2(PbZn 2/3 Nb 1/3 )O 3 + x mol% MnO 2 (PZT‐PZNM) were used to fabricate the 31‐mode type‐I PEHs for identifying the FOM of the piezoelectric ceramics for these PEHs. [ 94 ] All the specimens contain the homogeneous perovskite phase without any secondary phase, and they exhibit the rhombohedral‐tetragonal morphotropic phase boundary (MPB) structure. [ 94 ] Moreover, they were well sintered and had a dense microstructure with a high relative density (>97% of the theoretical density).…”

Section: Fom Of Piezoelectric Materials For Pehmentioning

confidence: 99%

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Piezoelectric Energy Harvesting Design Principles for Materials and Structures: Material Figure‐of‐Merit and Self‐Resonance Tuning

Song

Kim

et al. 2020

Advanced Materials

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Piezoelectric energy harvesters (PEHs) aim to generate sufficient power to operate targeting device from the limited ambient energy. PEH includes mechanical-to-mechanical, mechanical-to-electrical, and electrical-to-electrical energy conversions, which are related to PEH structures, materials, and circuits, respectively; these should be efficient for increasing the total power. This critical review focuses on PEH structures and materials associated with the two major energy conversions to improve PEH performance. First, the resonance tuning mechanisms for PEH structures maintaining continuous resonance, regardless of a change in the vibration frequency, are presented. Based on the manual tuning technique, the electrically-and mechanicallydriven self-resonance tuning (SRT) techniques are introduced in detail. The representative SRT harvesters are summarized in terms of tunability, power consumption, and net power. Second, the figure-of-merits of the piezoelectric materials for output power are summarized based on the operating conditions, and optimal piezoelectric materials are suggested. Piezoelectric materials with large k ij , d ij , and g ij values are suitable for most PEHs, whereas those with large k ij and Q m values should be used for on-resonance conditions, wherein the mechanical energy is directly supplied to the piezoelectric material. This comprehensive review provides insights for designing efficient structures and selection of proper piezoelectric materials for PEHs.

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Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

Kim,

Chae

et al. 2023

Advanced Intelligent Systems

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[001]‐oriented NaNbO3 films are deposited on Sr2Nb3O10/TiN/SiO2/Si substrates at 300 °C. The Sr2Nb3O10 nanosheets are used as a template to form crystalline NaNbO3 films at low temperature. The NaNbO3 films deposited on one Sr2Nb3O10 monolayer exhibit a bipolar switching curve due to the construction and destruction of oxygen vacancy filaments. Because the Sr2Nb3O10 monolayer does not act as an insulating layer, the film does not exhibit self‐rectifying properties. Self‐rectifying properties are observed in the NaNbO3 memristor, which forms on two Sr2Nb3O10 monolayers that act as tunnel barriers in the memristor. The memristor exhibits extensive rectification and on/off ratios of 48 and 15.7, respectively. Tunneling is the current conduction mechanism of the device in the low‐resistance state, and Schottky emission and tunneling are responsible for the conduction mechanism in the high‐resistance state at low and high voltages, respectively. The piezoelectric nanogenerator produced using the [001]‐oriented NaNbO3 film generates high voltage (1.8 V) and power (3.2 μW). Furthermore, endurance of the resistive random‐access memory and nonlinear transmission characteristics of the biological synapse are accomplished in the NaNbO3 memristor powered by the NaNbO3 nanogenerator. Therefore, the [001]‐oriented crystalline NaNbO3 film formed at 300 °C may be utilized for self‐rectifying and self‐powered artificial synapses.

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Determination of the appropriate piezoelectric materials for various types of piezoelectric energy harvesters with high output power

Cited by 43 publications

References 43 publications

Refreshing doping concept in perovskite piezoceramics: Composite modulation hidden behind lattice substitution

Refreshing doping concept in perovskite piezoceramics: Composite modulation hidden behind lattice substitution

Piezoelectric Energy Harvesting Design Principles for Materials and Structures: Material Figure‐of‐Merit and Self‐Resonance Tuning

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures

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Determination of the appropriate piezoelectric materials for various types of piezoelectric energy harvesters with high output power

Cited by 43 publications

References 43 publications

Refreshing doping concept in perovskite piezoceramics: Composite modulation hidden behind lattice substitution

Refreshing doping concept in perovskite piezoceramics: Composite modulation hidden behind lattice substitution

Piezoelectric Energy Harvesting Design Principles for Materials and Structures: Material Figure‐of‐Merit and Self‐Resonance Tuning

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO3 Film Deposited on Sr2Nb3O10 Nanosheet at Low Temperatures

Contact Info

Product

Resources

About

Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO₃ Film Deposited on Sr₂Nb₃O₁₀ Nanosheet at Low Temperatures