Realization of Self‐Rectifying and Self‐Powered Resistive Random‐Access Memory Memristor Using [001]‐Oriented NaNbO3 Film Deposited on Sr2Nb3O10 Nanosheet at Low Temperatures
In-Su Kim,
Bumjoo Kim,
Seok-June Chae
et al.
Abstract:[001]‐oriented NaNbO3 films are deposited on Sr2Nb3O10/TiN/SiO2/Si substrates at 300 °C. The Sr2Nb3O10 nanosheets are used as a template to form crystalline NaNbO3 films at low temperature. The NaNbO3 films deposited on one Sr2Nb3O10 monolayer exhibit a bipolar switching curve due to the construction and destruction of oxygen vacancy filaments. Because the Sr2Nb3O10 monolayer does not act as an insulating layer, the film does not exhibit self‐rectifying properties. Self‐rectifying properties are observed in th… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.