Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions

Abstract

Articles you may be interested inIndium tin oxide-free transparent and conductive electrode based on SnOx | Ag | SnOx for organic solar cells Fabrication and photoresponse of a pn -heterojunction diode composed of transparent oxide semiconductors, pNiO and n-ZnO Appl.

Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power

“…However, it is not easy to deposit large-area thin films using PLD in commercial manufacturing. Electron-beam evaporation was also used for SnO films with a high-purity SnO 2 ceramic source, based on the reaction 2SnO 2 ⇋SnO + O 2 81214151617. However, the as-deposited SnO film required high-temperature post-annealing at more than 300 °C in Ar ambient or 600 °C in vacuum17.…”

Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction

“…But nevertheless, these localized states are predominantly reduced after annealing because of better crystallinity of ZSN films. More importantly, the estimated band gap is approaching the ideal band gap for solar energy harvesting, which inspires us to utilize this material in the photovoltaic devices …”

“…Actually, both the extracted values of ideality factor were larger than the theoretical value (ca. 1.0–2.0), probably owing to high junction resistance, interdiffusion, increased defect density at the interface in the type‐II (staggered gap) heterojunction, and so on . Series resistance ( R s ) plays an important role concerning carrier injection/extraction in the optoelectronic devices.…”

“…Band Alignment Engineering : As, a junction is formed between two dissimilar semiconductors, a built‐in electric potential would be established within the space‐charge‐region to accommodate the work function difference. The importance of this electric potential has been argued elsewhere . In order to accomplish the band energy diagram for our case, the SnO‐related parameters such as work function ( ϕ P ≈ 4.3 eV), band gap ( E g ∼ 0.7 eV) and electron affinity (χ P ≈ 3.70 eV) were taken from the previous literatures .…”

“…The importance of this electric potential has been argued elsewhere . In order to accomplish the band energy diagram for our case, the SnO‐related parameters such as work function ( ϕ P ≈ 4.3 eV), band gap ( E g ∼ 0.7 eV) and electron affinity (χ P ≈ 3.70 eV) were taken from the previous literatures . On the other hand, the electron affinity of ZnSnN 2 (χ N = 3.90 eV) was deduced by making a comparison with that of gallium nitride (GaN), as reported elsewhere .…”