2013
DOI: 10.1002/adma.201304021
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Determination of Polarization‐Fields Across Polytype Interfaces in InAs Nanopillars

Abstract: Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.

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Cited by 29 publications
(18 citation statements)
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“…The polarity maintains the same direction across the parallel polytype interfaces within the semiconductor NWs, as has been shown in many cases 7 8 11 . On the other hand, the reversal of polarity across interfaces is also possible in various semiconductors.…”
supporting
confidence: 55%
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“…The polarity maintains the same direction across the parallel polytype interfaces within the semiconductor NWs, as has been shown in many cases 7 8 11 . On the other hand, the reversal of polarity across interfaces is also possible in various semiconductors.…”
supporting
confidence: 55%
“…For compound semiconductors, the typical polytype structures include the zincblende (ZB) with cubic stacking in the [111] direction, and wurtzite (WZ) with hexagonal stacking in the [0001] direction. With controlled growth of compound semiconductor nanowires (NWs) with alternating ZB and WZ segments 3 4 , charge redistributions in certain polytype regions would happen due either to band offsets at the polytype interfaces 5 6 , or spontaneous polarization in polytype regions with asymmetric structures 7 8 9 10 .…”
mentioning
confidence: 99%
“…The phase information is crucial for studying electrostatic and magnetic fields since these fields can cause extra phase shifts to the electron waves passing through the sample. With high spatial resolution and sensitivity to variations in phase shifts, electron holography has been successfully applied to characterization of the potential, electric field, and charge distribution across semiconductor heterostructures …”
Section: Introductionmentioning
confidence: 99%
“…This causes loss of time and money. Another way of repairing is direct pipe welding or the application of patches [4][5][6]. Pipe welding is used in a variety of engineering applications, e.g.…”
Section: Introductionmentioning
confidence: 99%