Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect

“… of illumination wavelength [20] [21] and illumination level n [22] [23] [24] or under dark [25];  of operating mode in particular, in static regime [26], the dynamic frequency regime [27] or transient dynamic regime [28] [29] [30]);  of external action by applied electromagnetic field [31] [32], or irradiation of nuclear particles [12] or a change in temperature [33]; In this work, the phenomenological parameters, such as the recombination velocity of the minority carrier in volume (τ), at the emitter-base junction (Sf) and at the rear face (Sb) of the thickness base (H), are studied. The optimum thickness (H) of the silicon solar cell base leading to the maximum short circuit current is determined according to the doping rate Nb (D), for a low level of illumination n. Figure 1 represents a silicon solar cell of type n + -p-p + under polychromatic illumination [34] [35].…”

The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer

“…The performance of a solar cell has aroused the interest of many investigators [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. The solar p-n cell is a semiconductor photovoltaic cell.…”

“…In such a case the coordinate of such a surface is taken as the origin x = 0, and a boundary condition expressing the charge continuity at this surface is given [18]. Such a trend accepts also the study of this performance considering the collection efficiency of the base, the emitter and the depletion layer [1,2,[7][8][9][10][11][12]. It is shown that the normalized surface recombination velocity depends mainly on two parameters; these are the normalized scanning range and the normalized depth of the generation volume (that is subjected to the incident light).…”

“…2) The second trend accepts the mechanism where an effective interface recombination velocity i s that occurs principally within the depletion layer at the metallurgical interface [3,4,13,14]. Indeed, the effect of the characteristics of the space charge region and the processes taking place within this layer has rarely been considered [3,9]. El-Adawi et al [15] studied theoretically the characteristics of the depletion layer.…”

Ac Recombination Velocity in a Lamella Silicon Solar Cell

“…The techniques of characterization of solar cell for quality control [1] [2] [3] improve the fabrication processes, go through experimental [4] and theoretical [5] studies in static [6] or dynamic transient [7] [8] [9] and frequency [10] [11] [12].…”