Determination of landau level lifetimes in n-GaAs

Abstract

The lifetime of electrons in the first excited Landau level of n-GaAs is determined from a combination of measurements of far infrared cyclotron resonance induced absorption and conductivity change. Values of T 1 of the order of io-8s for densities of excited electrons of 1011 cm-3 and a temperature dependence of T-2.7 are found. An upper limit for the N = 0 Landau level to donor recombination time of the order of iO9s was derived from pulsed conductivity measurements.