The effect of magnetic field on free and bound exciton luminescence in GaAs/AlGaAs multiple quantum well structures: a quantitative study on the estimation of ultra-low disorder

Haldar, Subhomoy; Dixit, V. K.; Vashisht, Geetanjali; Porwal, S.; Sharma, T. K.

doi:10.1088/1361-6463/aa7781

Cited by 6 publications

(1 citation statement)

References 61 publications

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“…The origin of these PL transitions are verified by performing power dependent PL measurements (graph not shown here). In general, the PL intensity varies with the input laser excitation power as I PL ∝ I k exc , where the exponent value depends upon the nature of recombination processes [41,42]. The value of k less than 1 indicates that the luminescence originates from the localized states and this is the case of the P 0 peak in the samples S2 and S3.…”

Section: Resultsmentioning

confidence: 99%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

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Section: Resultsmentioning

confidence: 99%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy

Haldar

Banerjee

Vashisht

et al. 2019

Journal of Luminescence

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Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy

Haldar

Dixit

Vashisht

et al. 2018

Journal of Applied Physics

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The effect of the magnetic field on radiative and non-radiative mechanisms of charge carriers in GaAs/AlGaAs quantum wells (QWs) is investigated via quasi-simultaneous magneto-photoluminescence (PL) and magneto-surface photo-voltage (SPV) spectroscopy. At low-temperature, the luminescence intensity of ultra-low disordered GaAs/AlGaAs QWs generally increases under strong magnetic perturbation. Even at relatively high-temperature (100 K), the magnetic field driven enhancement of PL intensity is observed for thick QWs. On the other hand, it is found that the PL intensity of narrow QWs gradually decreases under a strong magnetic field at 100 K. The magnetic field driven enhancement (suppression) of radiative recombination efficiency for wide (narrow) QWs is investigated by considering the oscillator strength, thermal effects, and carrier re-distribution in energy states. Also, the charge carriers which escape from narrow QWs or are captured by interface defects are probed via magneto-SPV measurements. Radiative recombination and thermionic emission of charge carriers, investigated by magneto-PL and magneto-SPV spectroscopy, provide a clear guideline of the critical QW width which would be essential for magnetic field driven high-temperature operation of advanced emission based-devices.

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The effect of magnetic field on free and bound exciton luminescence in GaAs/AlGaAs multiple quantum well structures: a quantitative study on the estimation of ultra-low disorder

Cited by 6 publications

References 61 publications

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy

Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy

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