Generation of very short far-infrared pulses by cavity dumping a molecular gas laser

Bekker, R. E. M. de; Claessen, L. M.; Wyder, P.

doi:10.1063/1.347167

Cited by 22 publications

(5 citation statements)

References 9 publications

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“…While there exist THz lasers, both gas lasers operating on transitions between molecular vibrations and semiconductor lasers (quantum cascade lasers) [3,7,14,46,47], none of these has been shown to generate short pulses. In molecular lasers the main problem is that the transitions between molecular vibrations are in most cases spectrally very narrow, preventing the generation of short pulses [48]. While it is possible to spectrally broaden the molecular transitions by high gas pressures, such lasers get increasingly difficult to operate.…”

Section: Generationmentioning

confidence: 99%

Table-top sources of ultrashort THz pulses

2007

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In this paper techniques for the generation and measurement of ultrashort pulses in the frequency range from about 0.1 to 10 THz are reviewed. The methods for generation are restricted to table-top systems based on short-pulse lasers in the visible or in the near-infrared. Three techniques are dealt with in detail: photoconductive switches, difference frequency generation and plasma sources. Definitions and methods to measure the pulse width are given, among them cross-correlation and measurements of the electric field of these pulses as a function of time by photoconductive switches and electro-optic sampling.

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Section: Generationmentioning

confidence: 99%

Table-top sources of ultrashort THz pulses

2007

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“…Early manifestations of pulsed THz sources are masers relying on stimulated emission from rotationally excited states in a molecular gas [5], followed by free-electron-laser (FEL) oscillators employing THz resonators [6,7]. Those will not be covered here.…”

Section: Introductionmentioning

confidence: 99%

Accelerator- and laser-based sources of high-field terahertz pulses

Stojanović¹,

Drescher²

2013

J. Phys. B: At. Mol. Opt. Phys.

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At present we are witnessing a rapid development of sources for terahertz (THz) pulses with very strong electromagnetic fields. These pulses are reaching a stage where they can be used to not only probe, but also uniquely control a variety of processes that range from fundamental dynamics in individual atoms and molecules, through phase transitions in solids to a wealth of interactions in biological materials. In this review, we are presenting an overview of two major directions in the generation of such radiation. Large-scale accelerator-based sources offer unprecedented pulse energies coupled with a wide tuning range and extreme repetition rates. Laser-based sources, on the other hand, are laboratory-scale instruments and thus are very attractive in their availability to the wide scientific community. The capabilities of different variants of these THz sources are evaluated and compared with each other. In addition, powerful techniques for the temporal characterization of THz pulses are discussed.

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“…One motivation for the detailed study of absorptance presented in this article is the role of absorptance in the performance of a LDSS used as the output coupler in a resonant ring or storage cavity [20], [25], [26], [27], [28]. When the laser fires, during the few nanoseconds of the early rise of the laser pulse, power will be absorbed in the wafer or transmitted through the wafer rather than being coupled out of the ring or resonator.…”

Section: Discussionmentioning

confidence: 99%

Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation

Claveau

Jawla

et al. 2023

IEEE Trans. THz Sci. Technol.

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The reflectance (R) and transmittance (T) of Si and GaAs wafers irradiated by a 6 ns pulsed, 532 nm laser have been studied for s-and p-polarized 250 GHz radiation as a function of laser fluence and time. The measurements were carried out using precision timing of the R and T signals, allowing an accurate determination of the absorptance (A) where A = 1-R-T. Both wafers had a maximum reflectance above 90% for a laser fluence ≥8 mJ/cm 2 . Both also showed an absorptance peak of ∼50% lasting ∼2 ns during the risetime of the laser pulse. Experimental results were compared with a stratified medium theory using the Vogel model for the carrier lifetime and the Drude model for permittivity. Modeling showed that the large absorptance at the early part of the rise of the laser pulse was due to the creation of a lossy, low carrier density layer. For Si, the measured R, T and A were in very good agreement with theory on both the nanosecond time scale and the microsecond scale. For GaAs, the agreement was very good on the nanosecond scale but only qualitatively correct on the microsecond scale. These results may be useful for planning applications of laser driven semiconductor switches.

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Generation of very short far-infrared pulses by cavity dumping a molecular gas laser

Cited by 22 publications

References 9 publications

Table-top sources of ultrashort THz pulses

Table-top sources of ultrashort THz pulses

Accelerator- and laser-based sources of high-field terahertz pulses

Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation

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