Determination de la position du niveau donneur du tellure dans GaSb

Determination of the energy separation ΔEc of the two minima of the conduction band of GaSb and its variation with temperature

“…The assumption n, + n3 = const may be justified if the intrinsic carrier conccntration is less than the extrinsic concentration (which is always the case here) and if all the donors are ionized. We have shown [9] that the tellurium donor level in Gash, determined from the previous measurements, is 125 meV above the k = (000) minimum.…”