Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide

Growth behavior of GaSb by metal–organic vapor-phase epitaxy

“…While all of these results are dependant on reactor-specific growth parameters, they provide a general insight, albeit somewhat limited, into the underlying growth mechanisms at work. The results of all these efforts agree that the growth rate is linearly dependent on the TMG mole fraction and, with the exception of Pascal et al [23], all the results agree that the growth rate is independent of the TMSb mole fraction for TMG/TMSb chemistry. All the studies agree that there is a kinetically limited region where the growth rate exponentially increases with increasing temperature.…”

“…Haywood et al [13] found that, for the TMG/TMSb growth chemistry, the growth rate had a linear dependence on the TMG mole fraction and was independent of the TMSb mole fraction over investigated range. Other investigations using the TMG/TMSb growth chemistry report two regimes in the Arrhenius-type dependence of the growth rate on inverse temperature; a regime from 560 to 640 1C exhibiting an activation energy of 36.4 kcal/mol and a regime above 640 1C where the growth rate was independent of temperature [23]. That same study indicated that the growth rate decreases at increased TMSb mole fractions for the TMG/TMSb growth chemistry [23].…”

“…Other investigations using the TMG/TMSb growth chemistry report two regimes in the Arrhenius-type dependence of the growth rate on inverse temperature; a regime from 560 to 640 1C exhibiting an activation energy of 36.4 kcal/mol and a regime above 640 1C where the growth rate was independent of temperature [23]. That same study indicated that the growth rate decreases at increased TMSb mole fractions for the TMG/TMSb growth chemistry [23]. Guang-Yu and Rui-Wu [9] investigated the kinetics of GaSb using the TMG/TMSb growth chemistry and noted an Arrhenius-type dependence of the growth rate on inverse temperature over the range of 560-620 1C, with an activation energy of 20.5 kcal/mol [9].…”

“…There have been previous efforts to determine the growth rate dependence of MOVPE GaSb on the growth parameters [9,13,23]. While determining the minimum V/III ratio for stoichiometric GaSb, Wang et al [24] examined the Arrhenius-type dependence of the growth rate on temperature over the range of 450-640 1C and found that the TMG/ TMSb growth chemistry had a single regime with an activation energy of 20.4 kcal/mol, while the TEG/TMSb chemistry exhibited a single regime with no measurable temperature dependence.…”

Growth and Characterization of Unintentionally Doped GaSb Nanowires

“…10 Activation energies for GaSb thin-film deposition have been reported to range from 19.3 kcal/mol to 54 kcal/mol, depending on the study. 14,[16][17][18] In this case, thermal decomposition of TMSb is assumed to be the rate-limiting step at lower temperatures due to the higher decomposition temperature of TMSb compared with TMGa. The activation energy measured in this study for GaSb nanowire growth is within the range of reported activation energies for GaSb thin-film deposition, suggesting that the rate-limiting step is similar in both cases.…”