Detection system operating at up to 7THz using quasioptics and Schottky barrier diodes

Yasui, Takanari; Nishimura, Akira; Suzuki, Tateo; Nakayama, Keiichi I.; Okajima, S.

doi:10.1063/1.2206770

Cited by 26 publications

(15 citation statements)

References 14 publications

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“…Metal-semiconductor Schottky diodes are often employed as mixing elements in heterodyne receivers, offering ease of use and a wide coverage of the THz frequency region. 3,4 Their main drawbacks are the limited sensitivity and the need for a high LO power. Superconducting hot electron bolometers (HEBs) made of Niobium or Niobium Nitride (NbN) are able to operate at low noise with very good frequency coverage but require cooling to 4K.…”

mentioning

confidence: 99%

High-Tc superconducting Josephson mixers for terahertz heterodyne detection

Malnou

Feuillet-Palma

Ulysse

et al. 2014

Journal of Applied Physics

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We report on an experimental and theoretical study of the high-frequency mixing properties of ion-irradiated YBa 2 Cu 3 O 7 Josephson junctions embedded in THz antennas. We investigated the influence of the local oscillator power and frequency on the device performances. The experimental data are compared with theoretical predictions of the general three-port model for mixers in which the junction is described by the resistively shunted junction model. A good agreement is obtained for the conversion efficiency in different frequency ranges, spanning above and below the characteristic frequencies f c of the junctions. V C 2014 AIP Publishing LLC.

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mentioning

confidence: 99%

High-Tc superconducting Josephson mixers for terahertz heterodyne detection

Malnou

Feuillet-Palma

Ulysse

et al. 2014

Journal of Applied Physics

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“…The state of the art for the room-temperature THz detectors operating in the frequency range of 1-10 THz is presented in Table II. For a long period of time, GaAs-based Schottky barrier diodes (SBDs) [7], [8] dominated this frequency range. Due to required biasing, these devices exhibit strong 1/f noise contribution; thus, the listed performance is achievable only in the shot-noise-limited regime for modulation frequencies typically exceeding 100 kHz.…”

Section: Sensitivitymentioning

confidence: 99%

“…Planar antenna-integrated zero-bias Schottky diodes could offer one of the possibilities; yet, the best available data indicate a strong sensitivity roll-off in the frequency range from 100 GHz to 1 THz [6]. GaAs Schottky diodes, which are optimized for the target frequency range [7], [8], possess high 1/f noise and are not suitable for continuous-wave (CW) power measurements. Recently, it was reported that field-effect transistor based THz detectors (TeraFETs) can offer an alternative solution for operation in a specified frequency range [9] and, in particular, in application with THz QCLs [10], [11].…”

Section: Introductionmentioning

confidence: 99%

Field-Effect Transistor Based Detectors for Power Monitoring of THz Quantum Cascade Lasers

Zdanevičius

Cibiraite

Ikamas

et al. 2018

IEEE Trans. THz Sci. Technol.

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We report on circuit simulation, modeling, and characterization of field-effect transistor based terahertz (THz) detectors (TeraFETs) with integrated patch antennas for discrete frequencies from 1.3 to 5.7 THz. The devices have been fabricated using a standard 90-nm CMOS technology. Here, we focus in particular on a device showing the highest sensitivity to 4.75-THz radiation and its prospect to be employed for power monitoring of a THz quantum cascade laser used in a heterodyne spectrometer GREAT (German REceiver for Astronomy at Terahertz frequencies). We show that a distributed transmission line based detector model can predict the detector's performance better than a device model provided by the manufacturer. The integrated patch antenna of the TeraFET designed for 4.75 THz has an area of 13 × 13 µm 2 and a distance of 2.2 µm to the ground plane. The modeled radiation efficiency at the target frequency is 76% with a maximum directivity of 5.5, resulting in an effective area of 1750 µm 2. The detector exhibits an area-normalized minimal noise-equivalent power of 404 pW/ √ Hz and a maximum responsivity of 75 V/W. These values represent the state of the art for electronic detectors operating at room-temperature and in this frequency range.

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“…The peak values of responsivity, quantum efficiency, and the specific detectivity at 9.6 THz and 4.8 K for a bias field of 2.0 kV/cm are 7.3 A/W, 29%, 5.3×10 11 , respectively. Yasui et al [Yasui et al, 2006] developed a wide-bandwidth, high-sensitivity, continual terahertz-wave sensor that utilizes a quasioptical parabolic mirror and a Schottky barrier diode and successfully applied it at up to 7 THz range. This sensor utilized a parabolic cylindrical mirror, a long-wire antenna, and a Schottky barrier diode.…”

Section: Schottky Barrier Detectorsmentioning

confidence: 99%