Detection of SARS-CoV-2 using dielectric modulated TFET-based biosensor

Abstract

Attributable to the rapid increase in human infection of Coronavirus disease 2019 (COVID-19) caused by severe acute respiratory syndrome coronavirus-2 (SARS-CoV-2), the World Health Organization (WHO) has declared this disease outbreak as a pandemic. This outbreak can be tackled to some extent through proper management and early diagnosis. This work reports a biosensor based on vertical tunnel field-effect transistor (VTFET) developed for the detection of SARS-CoV-2 from the clinical samples through the analysis of its spike, envelope, and DNA proteins. Investigation of the sensitivity of the proposed sensor has been done by calculating the shift in drain current. The dielectric constant equivalent of the virus proteins is used to represent the hybridized biomolecules within the nanogaps. The sensitivity of this proposed sensor is found to be significantly high (order of 10 6 ) showing the viability of the device to be a superior sensor. Furthermore, the sensitivity analysis concerning DNA charge density is also performed. The effect of DNA charge density variation on the threshold voltage (V th ) and sensitivity have also been studied in this work. The proposed sensor is also investigated for its noise performance and observed the sensitivity with and without the effect of interface trap charges. Finally, the proposed sensor is benchmarked against the sensitivity of various FET-based biosensors already published earlier.

Electrolyte-gated amorphous IGZO transistors with extended gates for prostate-specific antigen detection

“…Recently, biosensors based on extended-gate transistors with excellent device performance have been developed for highly sensitive detection of antigen molecule concentrations. [6][7][8] For instance, Lee et al proposed a biosensor based on a self-amplified, extended-gate phosphorus-doped poly-Si transistor with an operating voltage range of −30 to 60 V for sensitive detection of the hepatitis B surface antigen. 9 The work indicates that with the extendedgate structure, sensing pads can be separated from the transistors to prevent solution erosion during biomodification and biosensing.…”

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

“…The downside of the TFET device is not having any impact on the biosensor application, but still, researchers are proposed many approaches to increase the on-current (I on ) and suppress the ambipolar conductivity of the TFET. Many techniques are reported to address the difficulties faced by the TFET biosensor out of all the effective structural modification devices, and gate workfunction engineered methods yield full fruit results [25][26][27][28][29][30][31][32][33][34][35][36][37]. The Z-shaped gate hetero dielectric horizontal source pocket TFET Z-shaped gate hetero dielectric horizontal source pocket (ZHP-DM-TFET) based biosensor [18] reported high current (I on ) sensitivity and improved stability by suppressing the fringing field effects.…”

“…The gate-stack-oxide enhances the quality of the device by reducing the gate-channel leakage current. The practice of gate-stack-oxide using SiO 2 /HfO 2 reduces the subthreshold slope of the device by improving the capacitive coupling at the gate-channel interface [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37]. The proposed structure of the device includes the advantage of the gate work function along with the gate oxide stack to enhance the detection sensitivity and their limitation over the earlier work.…”

Pressure sensor based on Hetero-stack L-shape TFET: simulation study

“…Effect of interface trap charges (ITC) on the device performance This sub-section discusses the effect of interface trap charges on the drain current characteristics of the pressure sensor device. Due to the presence of ITCs, variation in capacitances takes place under the gate oxide region, this leads to variation in Vth, Ion, and SS of the sensor device[34,[36][37][38]. During the presence of positive ITCs under…”