Pressure sensor based on Hetero-stack L-shape TFET: simulation study

Abstract

In this paper, the first-time-ever pressure sensor based on Hetero-stack L-shape TFET has been proposed and investigated through the SILVACO ATLAS TCAD tool. Owing to the hetero-stacking of Germanium material and Silicon material, an enhanced Ion and reduced sub-threshold swing is obtained by the proposed device leading to enhanced Pressure sensor sensitivity. The basic working principle of this proposed pressure sensor device is when pressure is applied to the diaphragm, the diaphragm bends which varies the metal-dielectric thickness of the oxide layer which further alters the electrical characteristics of the proposed pressure sensor. The diaphragm bendings considered in the study are 0, 1, 2, and 2.5 nm. The performance of the proposed pressure sensor device is analyzed through different electrical performance characteristics such as energy band diagrams, electric field, potential, Ion, sub-threshold swing, electron band-to-band tunneling rate, and various other analog/RF parameters at different diaphragm bendings. The effects of ITCs at various bendings are also analyzed to provide an in-depth effect of the factors that might affect the performance of the sensor. The proposed sensor design will be proven as a milestone in the array of sensors built for ultra-sensitive pressure sensing applications.