Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Reddy, N. Nagendra; Panda, Deepak Kumar

doi:10.1088/1361-6439/ac7773

Cited by 14 publications

(6 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dielectric material added to the semiconductor device will act as a storage element that increases its gate capacitance by lowering the leakage current and these materials are having good electromagnetic and biocompatibility property with more chemical resistivity that increase the conductivity of the device. Therefore, it is observed from the figure that as the high K ‐dielectric value increases its drain current increases 18,29 …”

Section: Different Simulation Results With Explanationsmentioning

confidence: 97%

“…Now, to analyze the PSD of MoS 2 FET transistor, we use the developed MOSFET noise power equation based on the concept of a conventional theorem from the References [18,19,29,30]. The noise power equation is given as

S_{id} ((), f) goodbreak= \frac{I^{2} italicKT}{λWLf} {[\frac{1}{M_{2 d}} + (ἁ + ώ) μ]}^{2} δ_{t} ((), E_{n}); italicwhere δ_{t} ((), E_{n}) goodbreak= δ_{t 0} goodbreak+ δ_{tx} e^{- \frac{(E_{c} - E_{n})}{ε}}

where lambda is the attenuation coefficient of an electron in the oxide‐

λ = \frac{2}{p^{2}} \sqrt{2 mo (\emptyset_{B} - E_{g})}

.…”

Section: Analytical Model Developmentmentioning

confidence: 99%

“…Later, using differentiation method, Equation ( 5) is differentiated for different operating regions by considering the drift-diffusion velocities of the device, trap capacitances, trap energies, and oxide thicknesses of different dielectric materials and simplified the equation as Equations ( 6) and (7). 9,21 Now, to analyze the PSD of MoS 2 FET transistor, we use the developed MOSFET noise power equation based on the concept of a conventional theorem from the References [18,19,29,30]. The noise power equation is given as…”

Section: Analytical Model Developmentmentioning

confidence: 99%

See 2 more Smart Citations

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Kumar,

Panda

2023

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

In this paper, an analytical drain current model of double gate MoS2 FET Transistor for low‐frequency noise (LFN) power spectral density is developed, and compared its response with the device simulation of the proposed device structure. The developed low‐frequency noise power spectral density (PSD) model is analyzed with respect to different Trap densities, Oxide thicknesses, and high K‐dielectric materials using the TCAD Device simulation tool. Low‐frequency noise is one of the most important noises in any device since it degrades the device's performance. So, in this paper, we used a unique charge‐control model for analyzing the low‐frequency noise by considering the mobility degradation, trapping, and de‐trapping effects caused by trap densities and device lattice structure. Usually, all the previous studies on drain currents with low frequency are based on fluctuations caused by mobility and carrier variations. In our paper, we even considered the charge density fluctuation to analyze the drain current equation. Using a Charge Control Model, we can compute the parameters like gate capacitance (Cgs, Cgd), channel length modulation, and body effect. While other LFN models like the DC model, small signal model, and hybrid model will focus mainly on the static characteristics of the device such as its DC current–voltage (I‐V) relationship, terminal resistances, and input/output conductance of the devices. All the analytical model results were calibrated with the device simulation and it is observed that both are matches each other. Further, it is observed that with an increase in Trap density, the low‐frequency noise increases and low‐frequency noise is dominant at lower frequencies only (1–10 Hz), and after this frequency range the thermal noise will be the dominant noise factor.

show abstract

Section: Different Simulation Results With Explanationsmentioning

confidence: 97%

S_{id} ((), f) goodbreak= \frac{I^{2} italicKT}{λWLf} {[\frac{1}{M_{2 d}} + (ἁ + ώ) μ]}^{2} δ_{t} ((), E_{n}); italicwhere δ_{t} ((), E_{n}) goodbreak= δ_{t 0} goodbreak+ δ_{tx} e^{- \frac{(E_{c} - E_{n})}{ε}}

where lambda is the attenuation coefficient of an electron in the oxide‐

λ = \frac{2}{p^{2}} \sqrt{2 mo (\emptyset_{B} - E_{g})}

.…”

Section: Analytical Model Developmentmentioning

confidence: 99%

Section: Analytical Model Developmentmentioning

confidence: 99%

See 1 more Smart Citation

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Kumar,

Panda

2023

Int J Numerical Modelling

Self Cite

View full text Add to dashboard Cite

show abstract

“…Overall, the electrical parameters of a DM-MDG JL-MOSFET biosensor can vary with changes in the dielectric constant of the biomolecules of interest. These variations are crucial for optimizing the performance of the biosensor in detecting specific biomolecules with high sensitivity and low detection limits [16]. Subthreshold swing is defined as the change in gate voltage required to change the drain current by one decade (tenfold) [17].…”

Section: Findings and Discussionmentioning

confidence: 99%

A Novel Dielectric Modulated Misaligned Double-Gate Junctionless MOSFET as a Label-Free Biosensor

Kumar

Chauhan

2023

Iecb 2023

View full text Add to dashboard Cite

show abstract

“…It is reported in [ 3 ] that SARS-CoV-2 virus can be detected by TFET based biosensors. Besides the advantages of TFET based biosensors over MOSFETs, TFETs have extremely low ON current (I ON ) and ambipolar behaviour for conductivity which can lead to poor performance and even circuit failure [ 16 ]. Researchers are working to find out the best possible architecture that can increase the I ON as well as reduce the ambipolar current behaviour.…”

Section: Introductionmentioning

confidence: 99%

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

Ghosh,

Nelapati,

Saha

et al. 2024

PLoS ONE

View full text Add to dashboard Cite

This article provides insights in designing a dielectrically modulated biosensor by adopting high-k stacked gate oxide proposition in a bi-metal hetero-juncture Tunnel Field Effect Transistor (BM-SO-HTFET) with Si0.6Ge0.4 source. The integrated effect of heterojunction and stacked gate oxide leads to enhanced electrical performance of the proposed device in terms of carrier mobility and suppressed leakage current. Nano-cavity engraved beneath the bi-metal gate structure across the source/channel end acts the binding site of the biomolecules to be detected. This Configuration leads to improved control of biomolecules over source/channel tunnelling rate and the same is reflected in the sensing ability of the device while extracting the ON current sensitivity (SON) of the sensor. The reported biosensor is simulated using Silvaco ATLAS calibrated simulation framework. The analysis of the device sensitivity is carried out varying dielectric constants (k) of various biomolecules, both neutral as well as charged. Our study reveals that BM-SO-HTFET with Ge mole fraction composition x = 0.4 exhibits sensitivity as high as 4.1 × 1010 for neutral biomolecules and 3.2 × 1011 for positively charged biomolecules with k = 12. Furthermore, a transient response profile for the drain current with various biomolecules is explored to determine the varying settling time. From the simulation results, it is noted that BM-SO-HTFET exhibits ON current sensitivity of 4.1 × 1010 and 3.2 × 1011 for neutral and charged biomolecules respectively. In addition to this, for highly sensitive and real time detection of biomolecules, the impact of temperature and certain non-ideal factors drifting from ideal case of fully filled cavity have also been considered to analyze its optimum sensing performance.

show abstract

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Cited by 14 publications

References 35 publications

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

A Novel Dielectric Modulated Misaligned Double-Gate Junctionless MOSFET as a Label-Free Biosensor

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

Contact Info

Product

Resources

About

Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor

Cited by 14 publications

References 35 publications

Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps

Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps

A Novel Dielectric Modulated Misaligned Double-Gate Junctionless MOSFET as a Label-Free Biosensor

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors

Contact Info

Product

Resources

About

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps