Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon

Abstract

We report the observation of In-P and In-Sb atom pairs in Si using the perturbed γγ angular correlation technique with 111In as radioactive probe atoms. The pairs are characterized by νQ=179(1) MHz and 271(1) MHz, respectively, and their electric field gradient tensors are axially symmetric about a 〈111〉 lattice direction. The results suggest a strong interaction between acceptor and donor atoms in elemental semiconductors like Si and Ge.

Effects of external stress on defect complexes in semiconductors

“…The In-As pair in germanium, which is discussed here, is representative of the formation and properties of most intentionally doped substitutional impurity complexes in silicon and germanium [8][9][10][11][12][13][14][15][16].…”

Exploring solid state physics properties with radioactive isotopes

“…Table 1. PAC parameters of different acceptor-donor complexes in Si [146][147][148] using the probe atom 111 In → 111 Cd. The last column of the table lists the assignments of microscopic structures to the observed complexes.…”

“…By comparing the PAC data with theoretical calculations on the basis of a modified point charge model the microscopic structure of the In-acceptor and Cd-acceptor complex respectively, could be deduced (see figure 26). Very soon similar experiments in n-type Si followed and the formation of different complexes between In acceptors and donors such as P, As, Sb and Bi could be investigated successfully on a microscopic scale [146][147][148].…”

Electronic structure of acceptor-donor complexes in silicon

“…The Coulomb attraction between dopants of opposite charges introduced into Si is known to lead to the formation of donor-acceptor pairs occupying adjacent substitutional sites. 9,10 The effect of ion pairing on substitutional dopant diffusion and excess substitutional concentrations above the normal solid solubility limit are observed within the Si lattice. 11 In this letter, the electronic structure of Si clusters containing In or In-based trimer complexes is calculated, and In-based trimer complexes are then shown to be feasible as shallow acceptors in Si.…”