Effects of external stress on defect complexes in semiconductors

Abstract

Crystal field gradients that exist at lattice sites in solids depend on the symmetry of charge distribution around atomic sites. The charge symmetry could be broken either by the presence of impurity complexes in the host matrix or by external stress on the samples, which leads to an observable magnitude of electric field gradients (EFGs). The perturbed γ-γ angular correlation (PAC) method is employed here to investigate the effect of uniaxial stress on (111)Cd sites in crystalline doped semiconductors.