With the radioactive probe atom "'In as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-yy-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.
The presence of Cu atoms in /?-type Si is detected via their characteristic electric-field gradients measured at the radioactive acceptor ,ll In/ m Cd by the perturbed yy angular correlation technique. Cu forms pairs with acceptor atoms, thereby electrically passivating them, and is present as a contamination in Si wafers. Using the experimentally known Cu diffusion data and taking into account the effect of ion pairing, a new activation energy of 0.15 eV is deduced which is in accordance with the dissociation energy of 0.70 eV measured for Coulombic-bound acceptor-Cu pairs.
Doping of the nanocrystalline semiconductor ZnO with the donor In111 was achieved by the incorporation of In111 atoms during the growth process followed by a hydrothermal treatment at 473 K. The incorporation of In111 on substitutional Zn sites was shown by the perturbed γγ angular correlation technique. The structural quality of nanocrystalline ZnO with a mean grain size of 11 nm is significantly improved by annealing at 473 K, as revealed by x-ray diffraction, transmission electron microscopy, optical absorption measurements, and photoluminescence spectroscopy. It is shown that the incorporation of In111 on undisturbed Zn sites in nanocrystalline ZnO seems to be supported by the onset of crystal growth and by the removal of intrinsic defects.
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