Doping of the nanocrystalline semiconductor zinc oxide with the donor indium

Agne, T.; Guan, Z.; Li, X. M.; Wolf, H.; Wichert, Th.; Natter, Harald; Hempelmann, Rolf

doi:10.1063/1.1598289

Cited by 53 publications

(23 citation statements)

References 10 publications

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“…In a previous work, we reported on nanocrystalline ZnO (nano-ZnO) with a mean grain size of 11 nm, which was successfully doped with the radioactive donor 111 In [5]. The required incorporation of 111 In atoms on undisturbed Zn sites after a hydrothermal treatment at 473 K was shown by detecting the site specific electric field gradient (EFG) in nanocrystalline ZnO using perturbed gg angular correlation spectroscopy (PAC) [6].…”

Section: Introductionmentioning

confidence: 99%

Structural properties of the donor indium in nanocrystalline ZnO

et al. 2005

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The structural properties of the nanocrystalline semiconductor ZnO (nano-ZnO) doped with the donor Indium were investigated by perturbed gg angular correlation spectroscopy (PAC) and extended X-ray absorption fine structure measurements (EXAFS). Up to an average concentration of one In atom per nanocrystallite, PAC measurements show that about 12% of the 111 In atoms are incorporated on substitutional Zn sites. At higher In concentrations, new In defect complexes are visible in the PAC spectra, which dominate the spectra if the average In concentration exceeds one In atoms per nanocrystallite. In addition, the local environment of Zn and In atoms in In doped nano-ZnO was investigated by EXAFS. The measurements at the K edge of Zn show that the crystal structure of nano-ZnO corresponds to bulk ZnO. In heavily In doped nano-ZnO the EXAFS experiments at the K edge of In exhibit an expansion of the first O shell about the In site. Since about four O atoms are detected in this first shell a substitutional incorporation of the In atoms in the ZnO lattice is suggested. The second shell to be occupied by Zn atoms as well as higher shells are almost invisible, which might have the same microscopic origin as the occurrence of defect complexes observed by PAC.

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Section: Introductionmentioning

confidence: 99%

Structural properties of the donor indium in nanocrystalline ZnO

et al. 2005

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“…A lot of work has been done in the area of transition metal doping of ZnO single crystals and thin films [88][89][90][91][92]. However, a few reports on the synthesis and characterization of ZnO nanostructures doped with different impurities like Al, Sn, Ga, In, Sb, Cu, etc are available in the literature [93][94][95][96][97][98]. Li et al [99] has synthesized ZnO nanorods doped with manganese (Mn), chromium (Cr) and cobalt (Co) in a hydrothermal synthesis using zinc nitrate, transition metal nitrate and hexamethylenetetramine.…”

Section: Doping Of Zno Nanostructures Through Hydrothermal Routesmentioning

confidence: 99%

Hydrothermal growth of ZnO nanostructures

Baruah

Dutta

2009

Science and Technology of Advanced Materials

1,009

492

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One-dimensional nanostructures exhibit interesting electronic and optical properties due to their low dimensionality leading to quantum confinement effects. ZnO has received lot of attention as a nanostructured material because of unique properties rendering it suitable for various applications. Amongst the different methods of synthesis of ZnO nanostructures, the hydrothermal method is attractive for its simplicity and environment friendly conditions. This review summarizes the conditions leading to the growth of different ZnO nanostructures using hydrothermal technique. Doping of ZnO nanostructures through hydrothermal method are also highlighted.

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“…23 The successful doping of nanocrystalline ZnO with donor indium at substitutional sites has been accomplished by PAC measurements. 24 Recently, PAC spectroscopy revealed an anomalous behavior of conduction electrons at the probe site in indium-doped ZnO samples. 25 The influence of phosphorus and boron doping on the elastic properties of silicon is studied by means of the PAC method using the acceptor 111 In as probe 26 ; a significant reduction in elastic constant of silicon with donors doping is observed, whereas acceptors did not have any influence.…”

Section: Hyperfine Interactionsmentioning

confidence: 99%

“…This sensitivity is advantageous for discriminating the presence of intrinsic and extrinsic defects in semiconductors, which is in general a basic problem in defect studies. Extensive PAC data are available on such measurements in semiconductors, [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] which can be summarized as follows:…”

Section: Hyperfine Interactionsmentioning

confidence: 99%

The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

Dogra¹,

Byrne

Ridgway

2009

Journal of Elec Materi

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Several experimental techniques are available to investigate materials but microscopic techniques based on hyperfine interaction form a subclass that can characterize materials at the smallest possible atomic scale. The interaction of the nuclear electromagnetic moments with the hyperfine fields arising from the extranuclear electronic charges and spin distributions forms the basis of hyperfine methods. In this review article, one of the hyperfine methods, known as perturbed angular correlation (PAC), has been described as it provides local-scale fingerprints about the formation, identification, and lattice environment of defects and/or defect complexes in semiconductors at the PAC probe site. In particular, the potential of the PAC technique has been demonstrated in terms of measured electric field gradient, its orientation, and the symmetry at the probe site for a variety of defects in semiconductors such as Si, InP, GaAs, InAs, ZnO, GaP, and InN.

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Doping of the nanocrystalline semiconductor zinc oxide with the donor indium

Cited by 53 publications

References 10 publications

Structural properties of the donor indium in nanocrystalline ZnO

Structural properties of the donor indium in nanocrystalline ZnO

Hydrothermal growth of ZnO nanostructures

The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors

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