Detection of DNA of genetically modified maize by a silicon nanowire field-effect transistor

Pham, Van Binh; Pham, Xuan Thanh Tung; Dang, Ngoc T.; Le, Tu; Tran, Phu Duy; Nguyen, Thanh Chien; Nguyen, Van Quoc; Dang, Chien Mau; Rijn, C.J.M. van; Tong, Duy Hien

doi:10.1088/2043-6262/2/2/025010

Cited by 8 publications

(4 citation statements)

References 34 publications

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“…In this research, the LOD was evaluated by lowering the concentration of target DNA (10 fM), as shown in Fig 10(B) . To the best of our knowledge, the LOD of the p-type silicon nanowire sensor demonstrated in this research is lower than that demonstrated by Pengfei et al [ 20 ], Adam et al [ 21 ], Ryu et al[ 44 ] or Pham et al [ 45 ], which were 1 nM, 0.1 nM, 1 pM and 200 pM, respectively. Our results verify that this silicon nanowire sensor is feasible as a biosensor to detect an extremely low concentration target DNA without additional labeling procedures.…”

Section: Resultscontrasting

confidence: 71%

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

Hashim

Arshad

et al. 2016

PLoS ONE

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A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications.

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Section: Resultscontrasting

confidence: 71%

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

Hashim

Arshad

et al. 2016

PLoS ONE

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“…Pengfei et al (2013) showed that on the basis of back-gate controlled sensors detection sensitivity for DNA and pH value improves in the subthreshold regime, which shows that optimization of SiNW-FET operating conditions, can provide significant improvement for the limits of SiNW-FET nanosensor and making it possible for higher-accuracy chemical and biological molecules detection. Pham et al (2011) fabricated SiNW-FET device using deposition and etching under angle (DEA) technique, then used to build up the complete SiNW-based biosensor. Ryu et al (2010) proposed a new method to fabricate SiNW-based biosensor devices after embedding Au nanoparticles (NPs) on SiNW to enhance the sensitivity for label-free DNA detection.…”

Section: Silicon Nws-based Fet Biosensormentioning

confidence: 99%

Recent advances in nanowires-based field-effect transistors for biological sensor applications

Ahmad

Mahmoudi

Ahn

et al. 2018

Biosensors and Bioelectronics

130

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Nanowires (NWs)-based field-effect transistors (FETs) have attracted considerable interest to develop innovative biosensors using NWs of different materials (i.e. semiconductors, polymers, etc.). NWs-based FETs provide significant advantages over the other bulk or non-NWs nanomaterials-based FETs. As the building blocks for FET-based biosensors, one-dimensional NWs offer excellent surface-to-volume ratio and are more suitable and sensitive for sensing applications. During the past decade, FET-based biosensors are smartly designed and used due to their great specificity, sensitivity, and high selectivity. Additionally, they have the advantage of low weight, low cost of mass production, small size and compatible with commercial planar processes for large-scale circuitry. In this respect, we summarize the recent advances of NWs-based FET biosensors for different biomolecule detection i.e. glucose, cholesterol, uric acid, urea, hormone, proteins, nucleotide, biomarkers, etc. A comparative sensing performance, present challenges, and future prospects of NWs-based FET biosensors are discussed in detail.

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“…5 ) Vapor-liquid-solid (VLS) Oxide assisted growth (OAG) Metal-assisted chemical etching Coating-catalyzed metals on silicon substrate (CVD) Coating-catalyzed metals on silicon substrate-laser ablation Si wafer-coated metal catalyst introduced with Si gas source OAG-thermal evaporation OAG-HF Electroless metal deposition-chemical etching [ 4 ] [ 5 , 6 ] [ 27 ] [ 11 , 13 , 15 ] Top–down approach (Fig. 4 ) None Electron beam lithography Nanoimprint lithography DEA technology and photolithography Photolithography-DRIE-TMAH-thermal oxidation Angled thin-film deposition-micrometer scale photolithography Lateral bridging growth [ 28 ] [ 29 ] [ 30 ] [ 31 ] [ 32 ] …”

Section: Reviewmentioning

confidence: 99%

Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications

2016

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The application of silicon nanowire (SiNW) biosensor as a subtle, label-free, and electrical tool has been extensively demonstrated by several researchers over the past few decades. Human ability to delicately fabricate and control its chemical configuration, morphology, and arrangement either separately or in combination with other materials as lead to the development of a nanomaterial with specific and efficient electronic and catalytic properties useful in the fields of biological sciences and renewable energy. This review illuminates on the various synthetic methods of SiNW, with its optical and electrical properties that make them one of the most applicable nanomaterials in the field of biomolecule sensing, photoelectrochemical conversion, and diseases diagnostics.

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Detection of DNA of genetically modified maize by a silicon nanowire field-effect transistor

Cited by 8 publications

References 34 publications

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

Recent advances in nanowires-based field-effect transistors for biological sensor applications

Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications

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