Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications

Namdari, Pooria; Daraee, Hadis; Eatemadi, Ali

doi:10.1186/s11671-016-1618-z

Cited by 110 publications

(49 citation statements)

References 86 publications

(89 reference statements)

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“…Turning off this mechanism of atomic transfer in the regime of blocked evaporation ( = 0) leads to an expected result that may be obtained on the basis of Eq. (9).…”

Section: Resultsmentioning

confidence: 99%

“…Taking into account that the slopes of the necking regions are mainly formed by flat [111] facets [39] with the lowest surface energy density, we may claim that the value < 0 in Eq. (9), and the length of the excited perturbations must be less than 9 0 . A numerical estimate of in this case can be obtained on the basis of the following assumptions.…”

Section: Resultsmentioning

confidence: 99%

“…(9) for Au give slightly different values for the surface energy density, but in all cases the relation (111) < (100) < (110) holds, which allows us to estimate the value of / 0 for nanowires with different orientations on the basis of Eq. (9). Such an estimation enables one to predict only the deviations of the parameter / 0 from the classical value either in a positive or negative direction.…”

Section: Effect Of the Anisotropy Of Surface Energy Density In Nanowimentioning

confidence: 99%

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Diversity of anisotropy effects in the breakup of metallic FCC nanowires into ordered nanodroplet chains

2020

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We have analyzed the expressed manifestation of the anisotropy of surface energy density in the dynamics of ultrathin nanowires, which break up into disjointed clusters when annealed below their melting temperature. The breakup process is studied for different temperatures and orientations of the nanowire axis relative to its internal crystal structure using the Monte Carlo kinetic method. We have also presented an approximate analytical model of the instability of nanowires. Generally, the interpretation of experimental results refers to the theoretical model developed by Nichols and Mullins, which is based on conceptions about the Rayleigh instability of liquid jets. In both cases, the theories -which do not take into account the anisotropy of surface energy density -predict the breakup of a nanowire/liquid jet with radius into fragments with an average length Λ = 9 . However, the observed value, Λ/ , often deviates from 9 either to lower values or to substantially greater ones (up to 24-30). Our results explain various observed features of the breakup and the significant variations in the values of its parameter Λ/ depending on experimental conditions. In particular, the ambiguous role of exchange by atoms of the surface of a nanowire with the surrounding layer of free atoms formed as a result of their rather intensive sublimation, which occurs in a number of cases, has been investigated. We have shown that this exchange can lead both to a decrease, and to a significant increase, in the parameter Λ/ . The obtained results could be potentially useful in applications such as the development of optical waveguides based on ordered nanoparticles chains.

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“…Turning off this mechanism of atomic transfer in the regime of blocked evaporation ( = 0) leads to an expected result that may be obtained on the basis of Eq. (9).…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Effect Of the Anisotropy Of Surface Energy Density In Nanowimentioning

confidence: 99%

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Diversity of anisotropy effects in the breakup of metallic FCC nanowires into ordered nanodroplet chains

2020

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“…-Gate Junctionless Silicon Nanowire Transistors I. INTRODUCTION S ILICON nanowires have a wide spectrum of promising applications such as current field-effect transistors (FETs) [1], ion-selective nanosensors [2], imaging sensor [3], photovoltaics [4], energy conversion and storage [5], and qubits [6]. However, fabricating a nanowire with characteristics required for a specific application can pose some major challenges.…”

Section: Impact Of Randomly Distributed Dopants Onmentioning

confidence: 99%

Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors

Carrillo-Nuñez

Mirza

Paul

et al. 2018

IEEE Trans. Electron Devices

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This paper presents experimental and simulation analysis of an -shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm. Our experimental measurements reveal that the ON-currents up to 1.15 mA/μm for 1.0 V and 2.52 mA/μm for the 1.8-V gate overdrive with an OFF-current set at 100 nA/μm. Also, the experiment data reveal more than eight orders of magnitude ON-current to OFF-current ratios and an excellent subthreshold slope of 66 mV/dec recorded at room temperature. The obtained experimental current-voltage characteristics are used as a reference point to calibrate the simulations models used in this paper. Our simulation data show good agreement with the experimental results. All simulations are based on driftdiffusion formalism with activated density gradient quantum corrections. Once the simulations methodology is established, the simulations are calibrated to the experimental data. After this, we have performed statistical numerical experiments of a set of 500 different JL-NWTs. Each device has a unique random distribution of the discrete dopants within the silicon body. From those statistical simulations, we extracted important figures of merit, such as OFF-current and ON-current, subthreshold slope, and voltage threshold. The performed statistical analysis, on samples of those 500 JL-NWTs, shows that the mean I D -V Gs characteristic is in excellent agreement with the experimental measurements. Moreover, the mean I D -V Gs characteristic reproduces better the subthreshold slope data obtained from the experiment in comparison to the continuous model simulation. Finally, performance predictions for the JL transistor with shorter gate lengths and thinner oxide regions are carried out. Among the simulated JL transistors, the configuration with 25-nm gate length and 2-nm oxide thickness shows the most promising characteristics offering scalable designs.Index Terms-Drift diffusion (DD), electronic transport, junctionless (JL) nanowire field-effect transistors (FETs) (JL-NWTs), random dopants, scattering mechanisms, silicon nanowire, simulations, variability.

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“…Silicon nanowires (SiNWs) are attracting worldwide research interest due to their fascinating properties and application in a wide range of areas, such as electronics, photovoltaics, solar cells, diagnostics, molecular sensing, batteries, catalysis, and analytical chemistry [1,2,3,4,5,6,7]. …”

Section: Introductionmentioning

confidence: 99%

Catalytic Activity of Silicon Nanowires Decorated with Gold and Copper Nanoparticles Deposited by Pulsed Laser Ablation

et al. 2018

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Silicon nanowires (SiNWs) decorated by pulsed laser ablation with gold or copper nanoparticles (labeled as AuNPs@SiNWs and CuNPs@SiNWs) were investigated for their catalytic properties. Results demonstrated high catalytic performances in the Caryl–N couplings and subsequent carbonylations for gold and copper catalysts, respectively, that have no precedents in the literature. The excellent activity, attested by the very high turn over number (TON) values, was due both to the uniform coverage along the NW length and to the absence of the chemical shell surrounding the metal nanoparticles (MeNPs). A high recyclability was also observed and can be ascribed to the strong covalent interaction at the Me–Si interface by virtue of metal “silicides” formation.

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Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications

Cited by 110 publications

References 86 publications

Diversity of anisotropy effects in the breakup of metallic FCC nanowires into ordered nanodroplet chains

Diversity of anisotropy effects in the breakup of metallic FCC nanowires into ordered nanodroplet chains

Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors

Catalytic Activity of Silicon Nanowires Decorated with Gold and Copper Nanoparticles Deposited by Pulsed Laser Ablation

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