Detecting swift heavy ion irradiation effects with graphene

Ochedowski, Oliver; Akcöltekin, S.; Ban-d’Etat, B.; Lebius, H.; Schleberger, Marika

doi:10.1016/j.nimb.2013.03.063

Cited by 16 publications

(12 citation statements)

References 25 publications

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“…Coulomb explosion [30] or a thermal spike [31], but it definitely occurs, especially under glancing angle conditions. In substrates covered by graphene this leads to folding of graphene [19] but under certain circumstances this can be avoided and then graphene is indeed able to catch sputtered material as has been reported recently [32]. The proposed implantation would be fully consistent with the fact that the tracks cannot be removed by heating.…”

Section: (B)supporting

confidence: 60%

Manipulation of the graphene surface potential by ion irradiation

et al. 2013

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We show that the work function of exfoliated single layer graphene can be modified by irradiation with swift (E kin = 92 MeV) heavy ions under glancing angles of incidence. Upon ion impact individual surface tracks are created in graphene on SiC. Due to the very localized energy deposition characteristic for ions in this energy range, the surface area which is structurally altered is limited to ≈ 0.01 µm 2 per track. Kelvin probe force microscopy reveals that those surface tracks consist of electronically modified material and that a few tracks suffice to shift the surface potential of the whole single layer flake by ≈ 400 meV. Thus, the irradiation turns the initially n-doped graphene into p-doped graphene with a hole density of 8.5 × 10 12 holes/cm 2 . This doping effect persists even after heating the irradiated samples to 500 • C. Therefore, this charge transfer is not due to adsorbates but must instead be attributed to implanted atoms. The method presented here opens up a new way to efficiently manipulate the charge carrier concentration of graphene.

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Section: (B)supporting

confidence: 60%

Manipulation of the graphene surface potential by ion irradiation

et al. 2013

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“…Only a few experimental studies have addressed the effect of SHI irradiation in graphene [26,27,28,29,30,31,32,33]. Most of these experiments were performed on supported graphene and under oblique incidence.…”

Section: Introductionmentioning

confidence: 99%

Creating nanoporous graphene with swift heavy ions

Vázquez

Åhlgren

Ochedowski

et al. 2017

Carbon

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We examine swift heavy ion-induced defect production in suspended single layer graphene using Raman spectroscopy and a two temperature molecular dynamics model that couples the ionic and electronic subsystems. We show that an increase in the electronic stopping power of the ion results in an increase in the size of the pore-type defects, with a defect formation threshold at 1.22-1.48 keV/layer. We also report calculations of the specific electronic heat capacity of graphene with different chemical potentials and discuss the electronic thermal conductivity of graphene at high electronic temperatures, suggesting a value in the range of 1 Wm −1 K −1. These results indicate that swift heavy ions can create nanopores in graphene, and that their size can be tuned between 1-4 nm diameter by choosing a suitable stopping power.

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“…This procedure was repeated for every experimental run. To further ensure correct irradiation conditions, we applied the following procedure 62 : if we assume an efficiency of unity (every ion creates a groove), we can calibrate the angle of incidence, because during an experiment the fluence is fixed and scales with the sine of Y.…”

Section: Methodsmentioning

confidence: 99%

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

et al. 2014

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The controlled creation of defects in silicon carbide represents a major challenge. A wellknown and efficient tool for defect creation in dielectric materials is the irradiation with swift (E kin Z500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved. Here we present experimental evidence that silicon carbide surfaces can be modified by individual swift heavy ions with an energy well below the proposed threshold if the irradiation takes place under oblique angles. Depending on the angle of incidence, these grooves can span several hundreds of nanometres. We show that our experimental data are fully compatible with the assumption that each ion induces the sublimation of silicon atoms along its trajectory, resulting in narrow graphitic grooves in the silicon carbide matrix.

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Detecting swift heavy ion irradiation effects with graphene

Cited by 16 publications

References 25 publications

Manipulation of the graphene surface potential by ion irradiation

Manipulation of the graphene surface potential by ion irradiation

Creating nanoporous graphene with swift heavy ions

Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation

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