We show that graphene on a dielectric substrate sustains major modifications if irradiated with swift heavy ions under oblique angles. Due to a combination of defect creation in the graphene layer and hillock creation in the substrate, graphene is split and folded along the ion track yielding double layer nanoribbons. The folded parts are up to several 100 nm in length. Our results indicate that the radiation hardness of graphene devices is questionable but also open up a new way of introducing extended low-dimensional defects in a controlled way.
The irradiation of SrTiO 3 single crystals with swift heavy ions leads to modifications of the surface. The details of the morphology of these modifications depends strongly on the angle of incidence and can be characterized by atomic force microscopy. At glancing angles, discontinuous chains of nanosized hillocks appear on the surface. The latent track radius can be determined from the variation of the length of the chains with the angle of incidence. This radius is material specific and allows the calculation of the electron-phonon-coupling constant for SrTiO 3 . We show that a theoretical description of the nanodot creation is possible within a twotemperature model if the spatial electron density is taken into account. The appearance of discontinuous features can be explained easily within this model, but it turns out that the electronic excitation dissipates on a femtosecond time scale and thus too rapidly to feed sufficient energy into the phonon system in order to induce a thermal melting process. We demonstrate that this can be solved if the temperature dependent diffusion coefficient is introduced into the model.
We present theoretical and experimental data on the threshold behaviour of nanodot creation with swift heavy ions. A model calculation based on a two-temperature model taking the spatially resolved electron density into account gives a threshold of 12 keV/nm below which the energy density at the end of the track is no longer high enough to melt the material. In the corresponding experiments we irradiated SrTiO 3 surfaces under grazing incidence with swift heavy ions. The resulting chains of nanodots were analyzed by atomic force microscopy. In addition, samples irradiated under normal incidence were analyzed by transmission electron microscopy. Both experiments show two thresholds, connected to the appearance of tracks and to the creation of fully developed tracks, respectively. The threshold values are similar for surface and bulk tracks, suggesting that the same processes occur at glancing and normal incidence. The experimental threshold for the formation of fully developed tracks compares well to the value obtained by the theoretical description.
We show that it is possible to prepare and identify ultra-thin sheets of graphene on crystalline substrates such as SrTiO(3), TiO(2), Al(2)O(3) and CaF(2) by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single layer, bilayer and few-layer graphene and graphite flakes as with conventional SiO(2) substrates. The optical contrast C of a single graphene layer on any of those substrates is determined by calculating the optical properties of a two-dimensional metallic sheet on the surface of a dielectric, which yields values between C = -1.5% (G/TiO(2)) and C = -8.8% (G/CaF(2)). This contrast is in reasonable agreement with experimental data and is sufficient to make identification by an optical microscope possible. The graphene layers cover the crystalline substrate in a carpet-like mode and the height of single layer graphene on any of the crystalline substrates as determined by atomic force microscopy is d(SLG) = 0.34 nm and thus much smaller than on SiO(2).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.