2007
DOI: 10.1116/1.2712198
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Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP∕InGaAsP

Abstract: The authors report on the fabrication of photonic crystals in the InP∕InGaAsP∕InP material system for applications at telecommunication wavelengths. To achieve low optical loss, the photonic crystal holes must demonstrate smooth sidewalls and should be simultaneously deep and cylindrical. The authors present the etching process of these structures based on a Cl2∕Ar∕N2 chemistry with an inductively coupled plasma reactive-ion etching system. A systematic analysis is provided on the dependency of the hole sidewa… Show more

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Cited by 42 publications
(27 citation statements)
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“…[15][16][17] Very recently, a detailed study was presented on the use of N 2 as a passivation component in ICP etching of InP photonic crystals. 18 In the present article, we describe a comprehensive investigation of these processes and their conditions. Apart from the detailed report on using O 2 as the passivating component, a comparison of the use of O 2 and N 2 is also provided.…”
mentioning
confidence: 99%
“…[15][16][17] Very recently, a detailed study was presented on the use of N 2 as a passivation component in ICP etching of InP photonic crystals. 18 In the present article, we describe a comprehensive investigation of these processes and their conditions. Apart from the detailed report on using O 2 as the passivating component, a comparison of the use of O 2 and N 2 is also provided.…”
mentioning
confidence: 99%
“…The results presented in Ref. [12] suggest, e.g., that there is a fundamental correlation between deep holes and rough sidewall surfaces. However, the data were not consistent enough to enable a clear identification of inherent trade-offs between all relevant output parameters, such as hole depth, hole shape, and sidewall roughness.…”
Section: Introductionmentioning
confidence: 88%
“…The separate influence of various input parameters of the Cl 2 /N 2 process was analyzed in detail in Ref. [12]. The results presented in Ref.…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, it is now possible with plasma etching process using high density plasma reactors such as Inductive Coupled Plasma (ICP) to transfer nanometer scale patterns from the mask to the substrate [1][2][3][4][5]. The success of the high aspect ratio pattern transfer without geometrical defects [6][7][8][9] (bowing, undercut, trenching,..) is tributary of a good understanding of the physical and chemical mechanisms of the plasma discharge and the surface kinetic processes.…”
Section: Introductionmentioning
confidence: 99%