Designing of low temperature-grown Al x In y O self-mixing layer for flexible RRAM

Duan, Weijie; Rao, Chang; Wang, Xinzhong; Pei, Yanli

doi:10.1088/2053-1591/aae5ba

Cited by 2 publications

(1 citation statement)

References 22 publications

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“…In ReRAM devices, connected/disconnected states can be controlled by the formation/rupture of conductive filaments via the migration of vacancies or ions. Owing to such a mechanism, metal oxides − such as Al x In y O and ZrO 2 and perovskite oxides such as ZnSnO 3 , TbMnO 3 , and so forth − are considered to be potential candidate materials for the resistance switching devices because of the presence of large amount of oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi₃I₁₀ and Its Application in Resistive Switching Devices

Xiong

She

et al. 2019

ACS Appl. Mater. Interfaces

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The development of organic−inorganic hybrid perovskite materials has been rapid in recent years; but their applications are limited by the toxicity and stability of the materials. To address these issues in the context of resistive switching devices, an inorganic lead-free perovskite namely CsBi 3 I 10 is developed. Uniform and pinhole-free CsBi 3 I 10 thin films can be fabricated by using CsI-rich precursor solution via a facile antisolvent-assisted spin-coating method. The nonvolatile resistive switching devices based on CsBi 3 I 10 demonstrate a large on/off ratio (10 3 ), reliable retention properties (10 4 s), and endurance (150 cycles). Conductive atomic force microscopy reveals that the high-and low-resistance states are formed by breaking and formation of conductive filaments in the perovskite thin film. Because of the excellent stability of the CsBi 3 I 10 perovskite, the devices exhibit no obvious change in resistive switching behavior even after over 2 month storage in an ambient (60% relative humidity) environment. Our work suggests that the all-inorganic lead-free CsBi 3 I 10 perovskite has great potential in resistive switching memory as well as in other optoelectronic devices where toxicity and stability are a concern.

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Section: Introductionmentioning

confidence: 99%

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi₃I₁₀ and Its Application in Resistive Switching Devices

Xiong

She

et al. 2019

ACS Appl. Mater. Interfaces

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Progress of lead-free perovskite and its resistance switching performance

Zeng¹,

Tan²,

Tang³

et al. 2021

Acta Phys. Sin.

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With the rapid development of the information age, the demand for information storage capacity and miniaturization of memory units has been being increased. However, the commonly used silicon-based flash memory has nearly approached to its physical limit. The resistive switching random access memory (ReRAM) has become one of the promising candidates for the next-generation non-volatile memory due to its simple structure, fast operation speed, excellent flexibility, and long endurance. Recently, we witnessed that the lead halide perovskites, as hot star materials, have been widely used in optoelectronic fields owning to their advantages of low cost, excellent photoelectric properties, and solution process ability. Moreover, the lead halide perovskite has been successfully used as the active layer in ReRAM device because of its tunable bandgap, long charge carrier diffusion length, fast ion migration, and high charge carrier mobility. Whereas the toxicity of lead in halide perovskite is a very horrible problem in lead halide perovskite-based ReRAM devices. The lead-free halide perovskite is considered to be the most promising material for perovskite-based ReRAM devices because it does not contain lead element. Most recently, a large number of scientists from different groups have begun to study lead-free perovskite-based ReRAM devices. For example, tin, bismuth, antimony, and copper-based halide perovskite materials have been utilized in ReRAM devices and exhibited excellent resistance switching (RS) performances. Here in this paper, the recent development of lead-free perovskite and its RS performance are reviewed, including lead-free halide perovskite materials, RS performances, and RS mechanisms of lead-free perovskite-based ReRAM. Finally, the key problems and development prospects of lead-free perovskite-based ReRAM are also presented, which provides a fundamental step towards developing the RS performance based on lead-free halide perovskites.

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Designing of low temperature-grown Al_xIn_yO self-mixing layer for flexible RRAM

Cited by 2 publications

References 22 publications

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi₃I₁₀ and Its Application in Resistive Switching Devices

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi₃I₁₀ and Its Application in Resistive Switching Devices

Progress of lead-free perovskite and its resistance switching performance

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Designing of low temperature-grown Al x In y O self-mixing layer for flexible RRAM

Cited by 2 publications

References 22 publications

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi3I10 and Its Application in Resistive Switching Devices

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi3I10 and Its Application in Resistive Switching Devices

Progress of lead-free perovskite and its resistance switching performance

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Product

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Designing of low temperature-grown Al_xIn_yO self-mixing layer for flexible RRAM

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi₃I₁₀ and Its Application in Resistive Switching Devices

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi₃I₁₀ and Its Application in Resistive Switching Devices