Interfacial modification, which serves multiple roles, is vital for the fabrication of efficient and stable perovskite solar cells. Here, a multifunctional interfacial material, biguanide hydrochloride (BGCl), is introduced between tin oxide (SnO2) and perovskite to enhance electron extraction, as well as the crystal growth of the perovskite. The BGCl can chemically link to the SnO2 through Lewis coordination/electrostatic coupling and help to anchor the PbI2. Better energetic alignment, reduced interfacial defects, and homogeneous perovskite crystallites are achieved, yielding an impressive certified power conversion efficiency (PCE) of 24.4%, with an open‐circuit voltage of 1.19 V and a drastically improved fill factor of 82.4%. More importantly, the unencapsulated device maintains 95% of its initial PCE after aging for over 500 h at 20 °C and 30% relative humidity in ambient conditions. These results suggest that the incorporation of BGCl is a promising strategy to modify the interface and control the crystallization of the perovskite, toward the attainment of highly efficient and stable perovskite solar cells as well as other perovskite‐based electronics.
The performance of inverted perovskite solar cells is highly dependent on hole extraction and surface properties of hole transport layers. To highlight the important role of hole transport layers, a facile and simple method is developed by adding sodium chloride (NaCl) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The average power conversion efficiency of the perovskite solar cells prepared on NaCl-doped PEDOT:PSS is 17.1% with negligible hysteresis, compared favorably to the control devices (15.1%). Particularly, they exhibit markedly improved V and fill factor (FF), with the best FF as high as 81.9%. The enhancement of photovoltaic performance is ascribed to two effects. Better conductivity and hole extraction of PEDOT:PSS are observed after NaCl doping. More intriguingly, the perovskite polycrystalline film shows a preferred orientation along the (001) direction on NaCl-doped PEDOT:PSS, leading to a more uniform thin film. The comparison of the crystal structure between NaCl and MAPbCl indicates a lattice constant mismatch less than 2% and a matched chlorine atom arrangement on the (001) surface, which implies that the NaCl crystallites on the top surface of PEDOT:PSS might serve as seeds guiding the growth of perovskite crystals. This simple method is fully compatible with printing technologies to mass-produce perovskite solar cells with high efficiency and tunable crystal orientations.
The development of organic−inorganic hybrid perovskite materials has been rapid in recent years; but their applications are limited by the toxicity and stability of the materials. To address these issues in the context of resistive switching devices, an inorganic lead-free perovskite namely CsBi 3 I 10 is developed. Uniform and pinhole-free CsBi 3 I 10 thin films can be fabricated by using CsI-rich precursor solution via a facile antisolvent-assisted spin-coating method. The nonvolatile resistive switching devices based on CsBi 3 I 10 demonstrate a large on/off ratio (10 3 ), reliable retention properties (10 4 s), and endurance (150 cycles). Conductive atomic force microscopy reveals that the high-and low-resistance states are formed by breaking and formation of conductive filaments in the perovskite thin film. Because of the excellent stability of the CsBi 3 I 10 perovskite, the devices exhibit no obvious change in resistive switching behavior even after over 2 month storage in an ambient (60% relative humidity) environment. Our work suggests that the all-inorganic lead-free CsBi 3 I 10 perovskite has great potential in resistive switching memory as well as in other optoelectronic devices where toxicity and stability are a concern.
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