2021
DOI: 10.7498/aps.70.20210065
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Progress of lead-free perovskite and its resistance switching performance

Abstract: With the rapid development of the information age, the demand for information storage capacity and miniaturization of memory units has been being increased. However, the commonly used silicon-based flash memory has nearly approached to its physical limit. The resistive switching random access memory (ReRAM) has become one of the promising candidates for the next-generation non-volatile memory due to its simple structure, fast operation speed, excellent flexibility, and long endurance. Recently, we witnessed th… Show more

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