Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

Ng, Wai Tung; Yu, Jingshu; Wang, Mengqi; Li, Rophina; Zhang, Weijia

doi:10.1109/icsict.2018.8564869

Cited by 7 publications

(3 citation statements)

References 21 publications

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“…For switching frequency over 100 kHz, it is recommended to use separate turn-on and turn-off paths, Kelvin source connection, ferrite beads, and minimized turn-off resistance and inductance of the driving loop [10]. Various driving circuits for GaN HEMTs were explored in References [9][10][11][12][13][14][15][16][17][18]. Discussion and designs for GaN HEMT driving circuits were provided in References [19][20][21].…”

Section: Gan Hemt Backgroundmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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Section: Gan Hemt Backgroundmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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“…It is more suitable for high temperature, high pressure and high frequency applications, such as smart grid, mobile communication and new energy vehicles [1][2][3][4][5][6]. Latest power electronic application systems have higher and higher requirements for WBG FETs driver ICs, which includes speed, intelligence and reliability [7,8].…”

Section: Introductionmentioning

confidence: 99%

A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs

Zhou

Yuan

et al. 2022

IEICE Electron. Express

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A high-speed gate driver circuit which can meet both GaN FET and SiC MOSFET is presented. High-speed output drive circuit with wide output drive voltage is introduced in the driver circuit to improve speed and efficiency. By using high-speed level shift circuit and floating step-down low dropout regulator (LDO) circuit, the signal amplitude of the internal circuit for the output drive circuit is reduced, and the speed is greatly improved. Based on the proposed output drive circuit, a galvanically isolated 20 MHz 4 A gate driver using capacitive coupling with 5.5 V to 24 V output drive voltage is design and implemented in 180 nm BCD process. Test results show the prototype gate driver achieves the rise and fall time of 2.2 ns and 2.5 ns respectively under 5.5 V supply for GaN FET driving, and the rise and fall time of 4.1 ns and 4.6 ns respectively under 24 V supply for SiC MOSFET driving with 20 MHz frequency.

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“…In addition, a study proposed an analytical method that accounts for non-ideal factors (such as the inductance resistance, on resistance, and leakage current) in order to reduce the difference between calculated and actual values [18]. Moreover, although the use of GaN HEMTs in class-E power amplifiers improves efficiency and performance, a compatible and suitable gate driver must be designed to drive the GaN HEMT [19,20]. To this end, the charge pump gate drive presented by Ishibashi [20] is useful for driving the depletion (D)-mode GaN HEMT in a class-E amplifier.…”

Section: Introductionmentioning

confidence: 99%

Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

Weng

Chang

et al. 2021

Energies

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In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requires high frequency sampling at a high voltage (>600 V), we developed an innovative control method called the minimum power input control. The output of this minimum power input control can be presented in simple empirical equations allowing the optimal power transfer efficiency for 6.78 MHz resonant wireless power transfer (WPT). In order to reduce the switching loss, a gate drive design for the D-mode GaN HEMT, which is highly influential for the reliability of the resonant WPT, was also produced and described here for circuit designers.

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Design Trends in Smart Gate Driver ICs for Power GaN HEMTs

Cited by 7 publications

References 21 publications

Review of GaN HEMT Applications in Power Converters over 500 W

Review of GaN HEMT Applications in Power Converters over 500 W

A 20MHz 4A gate driver with 5.5 to 24V output drive voltage for wide bandgap FETs

Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

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