Design of Ultra-High-Voltage Alternating Current (UHVAC) Power Transmission Lines

Chen, Jiamiao; Qiu, Wang; Pan, Feng; Song, Gang

doi:10.1007/978-3-662-54575-1_27

Cited by 3 publications

(2 citation statements)

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“…In the formula, 0 w represents the wind load perpendicular to the direction of the transmission line, with units kN ;  is the wind pressure unevenness coefficient for the wire, taken as 0.85; 0 w and z  are the same as for the iron tower; zc  is the wind load adjustment coefficient for the wire, which is set at 2.5 for the 500 kV voltage-level iron tower used in this study; sc  is the wire shape coefficient, taken as 1.2; d is the cross-sectional diameter of the wire, with the wire diameter used in this study being 0.02394 m, and the ground wire diameter being 0.013 m; L is the horizontal span between the iron towers, taken as 1690 m. [19] The amplitude is calculated using the formula…”

Section: Wind Load Simulation Analysismentioning

confidence: 99%

Research on the Constitutive Model for Load Point Displacement in Large Span Towers Due to Long-Span Conductor Galloping

ShiJie,

Rui,

BinXia

et al. 2024

Preprint

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This paper establishes an intrinsic function model for the displacement of the mounting point under the wind load of the conductor. This paper mainly takes the K1 cross-tower transmission line of 500kV transmission and substation project as the research object. Finite element analysis is used to establish the model and modal analysis is performed on the large-span tower-line coupling model to obtain the vibration modal data. Then, the average wind load is converted to the equivalent static load acting on the tower-line coupled system, and the transmission tower and conductor are mechanically analyzed. The loads at the tower suspension points are determined and a constitutive model of the displacements at these points is constructed. Error analyses of the model and simulated data provide a new perspective on the subsequent study of conductor dancing in transmission lines.

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Section: Wind Load Simulation Analysismentioning

confidence: 99%

Research on the Constitutive Model for Load Point Displacement in Large Span Towers Due to Long-Span Conductor Galloping

ShiJie,

Rui,

BinXia

et al. 2024

Preprint

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“…In 1993, Chen invented the superjunction device, which greatly improved the contradiction between R on,sp and BV with a much better relationship as R on,sp ∝ BV 1.32 [14,15]. And the superjunction MOSFET was commercialized in 1998 and hailed as a "milestone" in the field of power electronic devices [16].…”

Section: Superjunction Power Mosfetmentioning

confidence: 99%

New Electronic Devices for Power Converters

Kong

2023

Power Electronics, Radio Frequency and Microwave Engineering [Working Title]

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Power electronic devices are crucial components of power converter systems. The evolution of power devices drives the development of power converters, including improvements in performance, reliability, and power capacity. In this chapter, the author expounds the structure, working principle, and static and dynamic characteristics of the conventional PN junction diode. And the silicon carbide (SiC) Schottky barrier diode (SBD), junction barrier Schottky (JBS) diode, trench JBS (T-JBS) diode, and sidewall-enhanced trench JBS (SET-JBS) diode are also discussed and compared. Also, the structures and properties of the gallium oxide (Ga2O3) SBD and heterojunction diode are also summarized. Next, the author gives a detailed analysis and discussion of the silicon power metal-oxide-semiconductor field-effect transistor (MOSFET), superjunction MOSFET, and the SiC MOSFET and JFET, and the Ga2O3 MOSFET. Then, the device structure and operating principle, switching characteristics, and current tailing mechanism of the insulated gate bipolar transistor (IGBT) are also analyzed and summarized in detail. Finally, the energy band structure, working principle, and switching characteristic of the gallium nitride (GaN) high-electron mobility transistor (HEMT), one of the hot devices in the current market, are also described. Finally, the summary and prospect of power electronic devices are also presented in this chapter.

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Research on the Application of Portable X-ray Backscatter Imaging Technology in the Field of Non-destructive Testing of Crimped Power Fittings

Ni¹,

Huang

Huang³

et al. 2022

2022 IEEE Conference on Telecommunications, Optics and Computer Science (TOCS)

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Design of Ultra-High-Voltage Alternating Current (UHVAC) Power Transmission Lines

Cited by 3 publications

References 0 publications

Research on the Constitutive Model for Load Point Displacement in Large Span Towers Due to Long-Span Conductor Galloping

Research on the Constitutive Model for Load Point Displacement in Large Span Towers Due to Long-Span Conductor Galloping

New Electronic Devices for Power Converters

Research on the Application of Portable X-ray Backscatter Imaging Technology in the Field of Non-destructive Testing of Crimped Power Fittings

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