Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology

Koo, Yong-Seo; Lee, Kwang-Yeob; Kim, Kui-Dong; Kwon, Jong-Ki

doi:10.1016/j.mejo.2009.01.001

Cited by 14 publications

(7 citation statements)

References 5 publications

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“…1. On the other hand, when a negative bias is applied on the pad with a grounded line, the parasitic diode (p+ cathode/p-well or p-substrate /n-well /n+ anode) in the proposed device will be forward biased to discharge the negative ESD current [6].…”

Section: Ptscr Description Reviewmentioning

confidence: 99%

“…Additionally, difficulty exists in effectively discharging ESD current before a malfunction of the core circuit occurs. The SCR also causes a transient-induced latch-up problem due to its lower holding voltage [6]. The latch-up problem in normal operation can be avoided if the PTSCR possessed a higher holding voltage and higher trigger current.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

Koo¹

2011

IEICE Electron. Express

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Abstract:In this paper, an experimental analysis of the electrical characteristics of the PTSCR was conducted. The PTSCR contains a high trigger current and a holding voltage that enables latch-up immune during normal operation. The PTSCR in each process technology is verified by the TLP system as well as a hot chuck controller. The experimental results show that the trigger current and holding voltage are higher than that of other SCR devices. At higher temperatures, the holding voltage of the PTSCR decreased due to the operation mechanism of the SCR, while the trigger current increased due to the MOSFET trigger mechanism.

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Section: Ptscr Description Reviewmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

Koo¹

2011

IEICE Electron. Express

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“…It is difficult to use conventional SCRs in 5 V or 12 V applications, because the high trigger voltage causes an oxide breakdown of the internal circuit, and the low holding voltage causes latch-up by noise and overshoot voltage. The proposed ESD protection circuit improves the V t and V h values of both conventional SCR circuits and p-substrate triggered SCRs (PTSCR) [7], [8]; the circuit electrical characteristics are verified with a TCAD simulation tool. Figure 5(a) compares the I-V characteristics of the conventional SCR, PTSCR, and proposed ESD protection circuits.…”

Section: Introductionmentioning

confidence: 97%

Analysis of a Parasitic-Diode-Triggered Electrostatic Discharge Protection Circuit for 12 V Applications

Song¹,

Lee²,

Yang³

et al. 2017

ETRI Journal

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In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (V t ) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding n+/p+ floating regions. Moreover, the holding voltage (V h ) is improved by using segmented technology. The proposed circuit was fabricated using a 0.18-lm bipolar-CMOS-DMOS process with a width of 100 lm. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the V t of the proposed circuit increased from 14 V to 27.8 V, and V h increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machinemodel surges at 450 V.

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“…In electrostatic discharge events the amount of damage experienced by an integrated circuit is due to excessive gradient of voltage and current densities inside the device and circuit [5] [6][7] [8]. Schottky diode-based silicon-controlled rectifier is used in most electronics to mitigate ESD.…”

Section: Introductionmentioning

confidence: 99%

Back-end-of-the-line MEMS switches for power management, ESD and security

Tazin¹,

Saab²,

Tabib-Azar³

2018

Preprint

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This paper discusses a MEMS switch that can be fabricated using low temperature (<100oC) deposition and patterning techniques suitable for the back-end-of-the-line integration with CMOS. The resulting cross-bar switches can be used for electrostatic discharge protection, FPGA implementation, chip security assessment and lock-down, and circuit block power management. We discuss platinum and iron switch with turn-on voltages of ~ 1.8 V. In the case of the iron switches, we also show that they can be magnetized to have “memory” and stay on when turned on. Platinum switch cycling of up to 1000 times did not show any changes in their turn-on voltage and their contact resistance was unchanged. The 10-100 nm switch airgaps were formed using low temperature sputtered sacrificial polysilicon and XeF2 etching. XeF2 does not attack any of the metals used in CMOS enabling fabrication of cross-bar switches with any of these metals. Once activated, it takes ∿ 6  to mechanically turn on the switch that can be decreased to ~1 ns by optimizing the device structure. Interestingly, the nm-scale gaps can be used as spark gap as a fast plasma switch to discharge first followed by the activation of the MEMS switch.

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Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology

Cited by 14 publications

References 5 publications

Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

Analysis of a Parasitic-Diode-Triggered Electrostatic Discharge Protection Circuit for 12 V Applications

Back-end-of-the-line MEMS switches for power management, ESD and security

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