Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

Pal, Soumitra; Bose, Subhankar; Ki, Wing-Hung; Islam, Aminul

doi:10.1109/jeds.2019.2928830

Cited by 38 publications

(18 citation statements)

References 46 publications

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“…RRAM also has the advantages that it can remember information faster than flash memory, consume less power, and occupy less space. 71 2.2 | RRAM key parameters…”

Section: Rram Conceptmentioning

confidence: 99%

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Recent advances in resistive random access memory based on lead halide perovskite

Lin

et al. 2020

InfoMat

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Lead halide perovskites have attracted increasing attention in photovoltaic devices, light-emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the perovskite-based electrical devices in the past few years, such as transistors and resistive random access memories (RRAMs). Here, this article summarizes the recent progress the researchers have made of RRAM devices. Primarily, the working mechanism and the key parameters of RRAM are introduced. Generally, the working principles, including the conductive filament model (containing the types of the model of the metal cationsinduced filament and the model of the ions migration in bulk), the interface effect, and the electronic effect are the origins of the RRAM behaviors, and hence, various factors that affect the device performance are explored. Then, RRAMs based on organolead halide perovskite and all-inorganic perovskite are discussed in terms of different structures, different compositions, and different fabrication methods. Finally, a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite-based RRAMs. K E Y W O R D S all-inorganic perovskites, conductive filament models, organolead halide perovskites, resistive random access memories, resistive switching Jiayu Di and Jianhui Du contributed equally to this work.

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“…RRAM also has the advantages that it can remember information faster than flash memory, consume less power, and occupy less space. 71 2.2 | RRAM key parameters…”

Section: Rram Conceptmentioning

confidence: 99%

“…In comparison to DRAM, RRAM can return to the state before the last shutdown at the moment of starting up. RRAM also has the advantages that it can remember information faster than flash memory, consume less power, and occupy less space 71 …”

Section: Rram Concept and Key Parametersmentioning

confidence: 99%

Recent advances in resistive random access memory based on lead halide perovskite

Lin

et al. 2020

InfoMat

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“…The read delay or read access time (

T_{RA}

) for differential reading cells isestimated as mentioned in [10, 28–30]. On the other hand, for single‐ended reading cells like SEDF9T,read delay is estimated according to [12].…”

Section: Simulation Setup and Resultsmentioning

confidence: 99%

Reliable write assist low power SRAM cell for wireless sensor network applications

Pal

Bose

et al. 2020

IET Circuits, Devices & Systems

Self Cite

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In this study, the authors have proposed a Write Assist Low Power 11T (WALP11T) SRAM cell. To analyse its performance in terms of major design metrics, the proposed cell has been compared with contemporary SRAMs like the Fully Differential 8T (FD8T), Single-Ended Disturb Free 9T (SEDF9T), Bit-interleaving architecture supporting 11T (BI11T), Selfrefreshing Logic-based 12T (WWL12T) and Differential 12T (D12T) cells. The proposed cell exhibits significantly shorter read/ write delay when compared to most comparison cells. It shows considerably higher read stability and write ability than that of FD8T and SEDF9T/D12T/WWL12T, respectively. Moreover, WALP11T dissipates significantly lower leakage power in comparison to the majority of comparison cells and exhibits 2.21 × /1.18 × lower read power delay product (R PDP) than that of BI11T/D12T and 5.12 × /1.39 × /1.09 × lower write power delay product (W PDP) than that of BI11T/WWL12T/D12T. The proposed cell consumes considerably lower area than WWL12T/D12T and shows highly reliable operation when subjected to the harsh process, voltage and temperature variations at both Slow NMOS-Fast PMOS and Fast NMOS-Slow PMOS corners. For all these improvements, WALP11T shows longer read/write delay than FD8T, higher leakage power and power delay product than BI11T and FD8T/SEDF9T, respectively, at V DD = 0.3 V.

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“…With the development of memristor research for about half a century, RRAM devices received considerable attention as the most typical memristor. Apart from research on device performance, recent research was directed toward the study of materials with resistive switching (RS) function, such as binary transition metal oxides (TiO x , AlO x , and NiO x ) [3,[107][108][109][110][111], perovskite compounds (CH 3 NH 3 PbI 3 and CsPbBr 3 ) [54,55,112], ferromagnetic materials [112,113], biological materials [114,115], and graphene-based materials (graphene and GO) [30,116].…”

Section: Memristormentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

Cited by 38 publications

References 46 publications

Recent advances in resistive random access memory based on lead halide perovskite

Recent advances in resistive random access memory based on lead halide perovskite

Reliable write assist low power SRAM cell for wireless sensor network applications

Memristive Non-Volatile Memory Based on Graphene Materials

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