Design of magnetic tunnel junction‐based tunable spin torque oscillator at nanoscale regime

Dwivedi, Amit Krishna; Islam, Aminul

doi:10.1049/iet-cds.2015.0104

Cited by 6 publications

(3 citation statements)

References 30 publications

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“…Emerging technologies like gate-all-around carbon nanotube field-effect transistors (GAA-CNTFETs) and nonvolatile spintronic devices like magnetic tunnel junctions (MTJs) have been introduced to answer the problems mentioned above [13][14][15][16][17][18]. GAA-CNTFETs show tremendous gate control because of their vast gate-channel capacitor capacity and the intrinsic features of the nanotubes used as channels in GAA-CNTFETs [4,5].…”

Section: Introductionmentioning

confidence: 99%

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

Rezaei

Amirany

Moaiyeri

et al. 2023

IET Circuits, Devices & Syst

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Significant progress has been made in manufacturing emerging technologies in recent years. This progress implemented in-memory-computing and neural networks, one of today's hottest research topics. Over time, the need to process complex tasks has increased. This need causes the emergence of intelligent processors. A nonvolatile associative memory based on spintronic synapses utilising magnetic tunnel junction (MTJ) and carbon nanotube field-effect transistors (CNTFET)-based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility. At the same time, CNTFET has overcome conventional complementary metal-oxide-semiconductor shortcomings like the short channel effect, drain-induced barrier lowering, and poor hole mobility. The proposed design is simulated in the presence of process variations. The proposed design aims to increase the number of weights generated in the synapse for higher memory capacity and accuracy. The effect of different tunnel magnetoresistance (TMR) values (100%, 200%, and 300%) on the performance and accuracy of the proposed design has also been investigated. This investigation shows that the proposed design performs well even with a low TMR value, which is very important and remarkable from the fabrication point of view.

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Section: Introductionmentioning

confidence: 99%

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

Rezaei

Amirany

Moaiyeri

et al. 2023

IET Circuits, Devices & Syst

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“…MTJ consists of two ferromagnetic layers which are called pinned layer and free layer , and one oxide barrier. The free layer could be aligned in two different configurations, parallel (P) and anti‐parallel (AP) with respect to the pinned layer, which results in low‐resistance or high‐resistance characteristic, respectively [11–13]. Parallel and anti‐parallel states can reach up to a 600% difference in resistance [14] due to the tunneling magnetoresistance (TMR) effect.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous energy‐sparing reconfigurable logic: spin‐based storage and CNFET‐based multiplexing

Krishna

Roohi

Zand

et al. 2017

IET Circuits, Devices & Systems

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Field programmable gate array (FPGA) attributes of logic configurability, bitstream storage, and dynamic signal routing can be realised by leveraging the complementary benefits of emerging devices with complementary metal oxide semiconductor (CMOS)-based devices. A novel carbon/magnet lookup table (CM-LUT) is developed and evaluated by trading off a range of mixed heterogeneous technologies to balance energy, delay, and reliability attributes. Herein, magnetic spintronic devices are employed in the configuration memory to contribute non-volatility and high scalability. Meanwhile, carbon nanotube field-effect transistors (CNFETs) provide desirable conductivity, low delay, and low power consumption. The proposed CM-LUT offers ultra-low power and high-speed operation while maintaining high endurance re-programmability with increased radiationinduced soft-error immunity. The proposed four-input one-output CM-LUT utilises 41 CNFETs and 20 magnetic tunnel junctions for read operations and 35 CNFET to perform write operations. Results indicate that CM-LUT achieves an average four-fold energy reduction, eight-fold faster circuit operation and 9.3% reconfiguration power delay product improvement in comparison with spin-based look-up tables. Finally, additional hybrid technology designs are considered to balance performance with the demands of energy consumption for near-threshold operation.

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“…With the rapid expansion of modern technologies, researchers have been motivated towards nonvolatile memory elements [1]. Nonvolatile elements such as spin transfer torque (STT) based magnetic tunnel junction (MTJ) and spin valve are promising candidates for nonvolatile Random Access Memory (MRAM) [2][3][4]. Nonvolatile memory elements are more reliable and convenient to be included in any circuit architecture with a prolonged data holding and retention capabilities as compared to the conventional volatile memory elements [3,5].…”

Section: Introductionmentioning

confidence: 99%

Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

Sourav

Dwivedi

Islam

2016

Journal of Materials

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Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been explored in this paper. Phase change random access memory (PCRAM) is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST) materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3) material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.

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Design of magnetic tunnel junction‐based tunable spin torque oscillator at nanoscale regime

Cited by 6 publications

References 30 publications

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

Heterogeneous energy‐sparing reconfigurable logic: spin‐based storage and CNFET‐based multiplexing

Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

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