Generation of random numbers is one of the most important steps in cryptographic algorithms. High endurance, high performance and low energy consumption are the attractive features offered by the Magnetic Tunnel Junction (MTJ) devices. Therefore, they have been considered as one of the promising candidates for next-generation digital integrated circuits. In this paper, a new circuit design for true random number generation using MTJs is proposed. Our proposed circuit offers a high speed, low power and a truly random number generation. In our design, we employed two MTJs that are configured in special states. Generated random bit at the output of the proposed circuit is returned to the write circuit to be written in the relevant cell for the next random generation. In a random bitstream, all bits must have the same chance of being “0”or “1”. We have proposed a new XOR-based method in this paper to resolve this issue in multiple random generators that produce truly random numbers with a different number of ones and zeros in the output stream. The simulation results using a 45[Formula: see text]nm CMOS technology with a special model of MTJ validated the advantages offered by the proposed circuit.
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