Design of Advanced Functional ZnO Conductive Thin Films with Arc Plasma

Yamamoto, Tetsuya; Nomoto, Junichi; Kitami, Hisashi; Sakemi, Toshiyuki; Makino, Hisao; Kobayashi, Keisuke; Aoki, Yasushi; Kishimoto, S.

doi:10.3131/jvsj2.60.292

Cited by 7 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The O + , O 2 + , In + , Sn + , In, Sn, and O species propagating toward a substrate contribute to the orientation of crystallites on the substrates and subsequently the film growth. When the DC arc plasma is switched off while O 2 gas is introduced into the deposition chamber at a constant rate, on the basis of the analysis of the data obtained by plasma diagnostics, additional O – will be formatted by the following reactions where the residual 1 O 2 reacts with the path (eq → ) and stable O 2 reacts with the path (eq → → ).…”

Section: Methodsmentioning

confidence: 99%

Tailoring of Point Defects in Polycrystalline Indium Tin Oxide Films with Postirradiation of Electronegative Oxygen Ions

Furubayashi

Maehara

Yamamoto

2019

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

We have developed a state-of-the-art technology to tailor oxygen-related point defects such as oxygen vacancies (V O ) and structural defects of polycrystalline highly conductive Sn-doped In 2 O 3 (ITO) films by a postirradiation of electronegative oxygen (O − ) ions. The intentional oxygen doping that would annihilate V O decreases carrier density (n e ) from 9.3 × 10 20 to 7.1 × 10 20 cm −3 with an increase of Hall mobility (μ H ) from 44 to 51 cm 2 •V −1 •s −1 , and subsequently, n e drastically decreases down to 1.2 × 10 19 cm −3 together with a decrease in μ H owing to a formation of Sn−O neutral complexes with a further increase in the amount of oxygen atoms that should fill the structural defects while retaining their crystal structure. Upon the filling of the structural vacancies, the successful control of intrinsic point defects is probably caused by almost no difference in the ionic radii between In 3+ having six-coordination and Sn 4+ having eight-coordination. The O − -ion-irradiation technology enables one to tailor the physical properties of ITO films over a wide range while retaining the crystal structure of the films.

show abstract

Section: Methodsmentioning

confidence: 99%

Tailoring of Point Defects in Polycrystalline Indium Tin Oxide Films with Postirradiation of Electronegative Oxygen Ions

Furubayashi

Maehara

Yamamoto

2019

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this work, we used ion plating with direct-current (DC) arc discharge of which product name is reactive plasma deposition (RPD) that has been commercially employed [13]. RPD with a high growth rate [14, 15] enables the fabrication of films with a uniform spatial distribution of t prepared on large substrates with a size such as 1.5 × 1.5 m 2 .…”

Section: Introductionmentioning

confidence: 99%

New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobility

2019

Self Cite

View full text Add to dashboard Cite

We demonstrated that a mass density and size effect are dominant factors to limit the transport properties of very thin amorphous Sn-doped In 2 O 3 ( a -ITO) films. a -ITO films with various thicknesses ( t ) ranging from 5 to 50 nm were deposited on non-alkali glass substrates without intentional heating of the substrates by reactive plasma deposition with direct-current arc discharge. a -ITO films with t of more than 10 nm showed a high Hall mobility ( μ H ) of more than 50 cm 2 /V s. For 5-nm-thick a -ITO films, we found that μ H was as high as more than 40 cm 2 /V s. X-ray reflectivity measurement results revealed that the mass density ( d m ) determined the carrier transport in a -ITO films. For a -ITO films with t of more than 10 nm, d m had a high value of 7.2 g/cm 3 , whereas a -ITO films with t of less than 10 nm had low d m ranging from 6.6 to 6.8 g/cm 3 . Quantitative new insight from a size effect on the carrier transport is given for a -ITO films with t of less than 10 nm. This study shows that the ratio of t to mean free path of carrier electrons governed μ H .

show abstract

“…Several reports have indicated that O − ions cause strong oxidation in comparison with positive oxygen ions [3]. A recent study on plasma processing using an oxygen plasma suggested that the O − ions may play a key role in proceeding oxidation [4]. However, the details are still unclear.…”

mentioning

confidence: 99%

“…However, the details are still unclear. For example, the dependence of the amount of O − flux and temperature on the oxidation has not been systematically investigated because there are several other kinds of reactive species besides O − ions in oxygen plasmas [4,5].…”

mentioning

confidence: 99%

See 1 more Smart Citation

Effect of a Magnetic Filter Across the Exit Hole of a Flat Oxygen Plasma Source

Kodama

Himura

Azuma

et al. 2019

Plasma and Fusion Research

View full text Add to dashboard Cite

This study aims to develop a novel flat oxygen plasma source containing a magnetic filter. The aspect ratio of the diameter to the length of the source vessel was approximately four. A pair of small permanent magnets was inserted in a metal flange to generate the magnetic filter at the exit hole of the plasma source. Measured currentvoltage characteristics indicated that a clear decrease in the electron temperature was successfully attained across the magnetic filter, which was adequate for producing negative oxygen ions via dissociative electron attachment.

show abstract

Design of Advanced Functional ZnO Conductive Thin Films with Arc Plasma

Cited by 7 publications

References 12 publications

Tailoring of Point Defects in Polycrystalline Indium Tin Oxide Films with Postirradiation of Electronegative Oxygen Ions

Tailoring of Point Defects in Polycrystalline Indium Tin Oxide Films with Postirradiation of Electronegative Oxygen Ions

New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobility

Effect of a Magnetic Filter Across the Exit Hole of a Flat Oxygen Plasma Source

Contact Info

Product

Resources

About