The clinical features among the affected patients were nearly identical, consisting of relatively mild CNS manifestations and complete recovery within 1 month.
We have investigated the electronic structures of n- or p-type doped
ZnO based on ab initio electronic band structure calculations. We find
unipolarity in ZnO; n-type doping using Al, Ga or In species decreases
the Madelung energy while p-type doping using N species increases the
Madelung energy, in addition to causing substantial localization of the
N states. Codoping using reactive codopants, Al, Ga or In, enhances
the incorporation of N acceptors in p-type codoped ZnO. We find the
delocalized states of N for p-type ZnO codoped with N and Al (Ga).
Pulsed laser deposition (PLD) is a good method for growing high-quality functional oxide thin films because of the technical simplicity and the ease with which deposition can be switched from one material to another. However, the repeatability of film quality is often hard to achieve, especially when using several different PLD systems. Here we report the steps that we have taken to grow nearly bulk-equivalent defect-free thin films, with SrTiO3 as an example, by using PLD in a reproducible fashion. The ablation laser fluence was found to have a very strong effect on the lattice constant and defect structure of the films. Nonstoichiometric transfer of material from the ablation target was observed when either the laser fluence or the beam spot area was inadequate.
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