Design of a radiation tolerant system for total ionizing dose monitoring using floating gate and RadFET dosimeters

Ferraro, Rudy; Danzeca, Salvatore; Brucoli, M.; Masi, A.; Brügger, M.; Dilillo, Luigi

doi:10.1088/1748-0221/12/04/c04007

Cited by 8 publications

(5 citation statements)

References 11 publications

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“…However, the dependence of absorbed dose is not linear. Maybe, if we use this biasing configuration in recharging mode, such as presented by the group of authors [36][37][38], the dependence of the absorbed dose can be linear and even with higher sensitivity. In that case, the radiation sensor should have some extended electronics that will continuously measure and do recharging.…”

Section: Biases During Irradiationmentioning

confidence: 99%

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Ilić

Jevtic

Stanković³

et al. 2020

Sensors

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This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

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Section: Biases During Irradiationmentioning

confidence: 99%

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Ilić

Jevtic

Stanković³

et al. 2020

Sensors

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“…For example, it has a higher resolution than p-channel MOSFETs (RADFET) and, since it gives digital output, the general circuit design can be simplified. It has been used in several space missions, for instance, 4M Lunar Flyby Mission from LuxSpace, an OHB company, and Chinese Chang'e 5-T1 test spacecraft [6], [8], [14], [15], [16].…”

Section: Figure 1 Functional Block Diagram Of Muradmentioning

confidence: 99%

“…The third sensor is a Floating Gate Dosimeter (FGDOS) manufactured by Sealicon (formerly IC-Malaga). The performances of RADFET and FGDOS sensors have been utilized in many different radiation environments [6], [7], [8], [9]. So, using three different sensors referenced above, it is possible to reliably check and compare the TID measurement results.…”

Section: Introductionmentioning

confidence: 99%

Development of Radiation Detector (Radiation Module) With Three Different Sensors for Space Applications

Kocaman¹,

Kopru²,

Solak³

et al. 2020

RAP 2019 Conference Proceedings

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The novel domestic radiation sensors -called "NürFETs" -can be used to measure Total Ionizing Dose (TID) on the mission orbit. NürFET responses are compared with two different sensors on the market with demonstrated performance. The radiation detector reader has been designed by the Space Technologies Research Institute (TUBITAK UZAY) and named MURaD and it contains three distinctive sensors, namely the aforementioned Nuclear Radiation Sensing Field Effect Transistor (NürFET), the p-channel RADFET, and the Floating Gate Dosimeter (FGDOS), respectively. They are used to measure TID comparatively and separately. The whole radiation module contains three different sensors which are exposed to gamma radiation on the ground via a Co-60 source and the functional and/or parametric test results are presented.

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“…These circuits often incorporate analogue front-end components, signal amplification stages, and digital interfaces for data acquisition and analysis. The integration of these circuits with the RadFET sensor allows for real-time radiation monitoring and data transmission, as citied in [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

Dalia Elfiky,

Ahmed S. Abd-Rabou,

Haitham Akah

et al. 2024

ARASET

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This work presents the development and fabrication process of a radiation dosimeter based on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology, known as RadFET. The aim of this study is to determine the specifications of the RadFET sensor for use in space missions by the Egyptian Space Agency in SPNeX mission. We have successfully determined the sensor specifications, specified the required electronic components for readout circuits, and confirmed the correct operation of the RadFET device through device simulations and radiation-induced damage models. The fabrication process was conducted at Zewail City of Science, Technology and Innovation cleanroom facility, utilizing Sentaurus TCAD for device and process simulations. We have conducted fabrication experiments for phosphorus spin-on dopant application, dry oxide growth, and wet oxidation using water vapor bubblers. The dosimeter readout PCB fabrication and assembly phases have been successfully completed. The developed RadFET dosimeter holds great promise for radiation monitoring in space missions, ensuring enhanced safety and reliability of electronic systems.

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Design of a radiation tolerant system for total ionizing dose monitoring using floating gate and RadFET dosimeters

Cited by 8 publications

References 11 publications

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Development of Radiation Detector (Radiation Module) With Three Different Sensors for Space Applications

Development and Fabrication of MOSFET-Based Radiation Dosimeter (RadFET) for Enhanced Performance in Space Missions

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