Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

Abstract

<p class="MsoNormal"> <span lang="EN-US">In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and <i>γ</i>-ray detectors is described. The front-end readout circuits includ</span><span lang="EN-US">e</span><span lang="EN-US"> the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is <st1:chmetcnv tcsc="0" numbertype="1" negative="False" hasspace="True" sourcevalue="4.9" unitname="mm" w:st="on">4.9 mm</st1:chmetcnv></span><span lang="EN-US"> </span><span lang="EN-US">×</span><span lang="EN-US"> </span><st1:chmetcnv tcsc="0" numbertype="1" negative="False" hasspace="True" sourcevalue="2.2" unitname="mm" w:st="on"><span lang="EN-US">2.2</span><span lang="EN-US"> </span><span lang="EN-US">mm</span></st1:chmetcnv><span lang="EN-US">. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF</span><span lang="EN-US">, and</span><span lang="EN-US"> power consumption is 1.65 mW per channel.</span><span lang="EN-US"><o:p></o:p></span> </p

Study on a micro radiation probe with high SNR based on CdZnTe detector

“…With the development of nuclear technology and its applications in daily life, the importance of accurate detection of radioactive rays and particles became even higher. Recently, semiconductor detectors such as CdZnTe detectors have received widespread attention due to their excellent performance [1]. CdZnTe detector is a composite compound semiconductor detector with a large forbidden bandwidth and high atomic number which can be operated at room-temperature [2].…”

“…Since the output charge of the detector only reaches tens of 𝑓 𝐶, a high-gain, low-noise front-end readout is required to drive the detector. Here we adopt a charge sensitive amplifier(CSA) as it is a suitable solution to achieve the amplification for smaller signals [1]. The energy resolution of the system can be improved by using a low noise CSA circuit and a fine-tuning signal shaping circuit.…”

Polarization Dependent Reflectivity and Transmission for Cd1-Xznxte/GaAs(001) Epifilms in the Far-Infrared and Near-Infrared to Ultraviolet Region

“…As compared to the traditional Si and Ge detectors, requiring cryogenic cooling and consuming high power -the II-VI based devices [1][2][3][4][5][6] are compact, expend less power, operate at room-temperature and display unique features for processing more than one million photons/second/mm 2 . In recent years, the growing interest for exploiting Cd 1-x Zn x Te (CZT) epifilms over group-IV semiconductors has been its ability to concoct alloys with accurate control of composition x and thickness d. The other advantages of utilizing these materials in device engineering include the accessibility of low-cost, large area, and electrically conductive substrates, such as GaAs.…”

“…In the electronic industry, as the veracity of using semiconductor materials intensifies -so does the compulsion of employing reliable and reproducible methods for appraising their distinctive qualities. In assessing the nature of defects and degree of crystallinity, many experimental techniques have been employed in the past, such as the Fourier transform infrared (FTIR) reflectivity and transmission [9,10], Raman scattering (RS) [8], photoluminescence (PL) [11], synchrotron X-ray diffraction (S-XRD) topography [1][2][3], and deep level transient spectroscopy (DLTS) [12], etc. In addition, the spectroscopic ellipsometry (SE) is perceived as an equally valuable tool for appraising the optical constants of semiconductor materials and evaluating the epifilm thickness [13].…”

“…Earlier, it was comprehended that only first principles methods could yield material characteristics with accuracies required of the experiments [21]. It is, therefore, quite intriguing to explore electrical and optical properties of novel CZT alloys [22][23][24][25] which are playing crucial roles in contriving IR detectors/ sensors, photovoltaic-cells, and many other optoelectronic devices [1][2][3][4][5][6]. The purpose of this paper is to report the results of comprehensive experimental and theoretical investigations to apprehend the structural and optical characteristics of ultrathin (20 nm ≤ d ≤ 1.0 µm) Cd 1-x Zn x Te epifilms prepared on GaAs substrate.…”