Design of a Ka-Band U-Shaped Bandpass Filter with 20-GHz Bandwidth in 0.13-μm BiCMOS Technology

Abstract

In this work, the design of a novel Ka-band miniaturized bandpass filter with broad bandwidth is demonstrated by using inversely coupled U-shaped transmission lines. In the proposed filter, two transmission zeros can be generated within a cascaded U-shaped structure and it can also be proven that, by inversely coupling two stacked U-shaped transmission lines, the notch frequency at the upper stopband can be shifted to a lower frequency, which results in a smaller chip size. The key parameters affecting the performance of the proposed filter are investigated in detail with the effective lumped-element circuit illustrated. Fabricated in a 0.13-μm SiGe BiCMOS process, the proposed filter achieves an insertion loss of 3.6 dB at a frequency of 28.75 GHz and the measured bandwidth is from 20.75 GHz to 41 GHz. The return loss is better than −10 dB from 20.5 GHz to 39 GHz. The lower transmission zero is located at 11.75 GHz with a suppression of 54 dB while the upper transmission zero is around 67 GHz with an attenuation of 34.6 dB. The measurement agrees very well with the simulation results and the overall chip size of the proposed filter is 176 × 269 μm2.

MmWave Physical Layer Network Modeling and Planning for Fixed Wireless Access Applications

“…The design of a 48 GHz phase-locked loop for 60 GHz transceivers [ 31 ] is presented in the Special Issue on mmWave integrated circuits and systems for 5G applications [ 32 ]. This Special Issue also covers other design aspects of mmWave transceivers, including bandpass filter design [ 33 ], variable gain amplifiers [ 34 , 35 ], and mixers [ 36 ].…”

An On-Chip Bandpass Filter Using Complementary Slit-Ring-Resonator-Loaded Spoof Surface Plasmon Polaritons with a Flexible Notch-Band

“…The SiGe(Bi)-CMOS semiconductor processing technology provides a solution for the miniaturization of the filter. Compared with traditional microstrip and substrate integrated waveguide (SIW) millimeter-wave filters, the on-chip millimeter-wave filters have a higher degree of miniaturization and are much easier to integrate with other RF devices [ 25 , 26 , 27 ]. To realize notch-bands, Refs.…”

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“…Compared to GaAs and GaN processes, the SiGe BiCMOS technologies are capable for higher integration and lower power consumption, which is crucial for portable devices with compact size. Various solid-state circuits have been implemented in SiGe technologies [1][2][3][4], such as the CML divider (Current Mode Logic divider) [5], transimpedance amplifier [6], voltage-controlled oscillators (VCOs) [7], bandpass filter [8], and switch [9]. Including the above various blocks based on the SiGe BiCMOS process, they have been widely used in various sub-THz systems, including radar receivers [10], 5G transceiver [11], and high-resolution imaging device [12].…”