Design of a Flat Field Spectrometer for Soft X-Ray Emission  Spectroscopy

Tokushima, Takashi; Harada, Yoshihisa; Watanabe, Masamitsu; Takata, Y.; Ishiguro, Eiji; Hiraya, Atsunari; Shin, Shik

doi:10.1142/s0218625x02002567

Cited by 42 publications

(23 citation statements)

References 12 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although several new instruments for soft X-ray emission have been taken into operation in recent years [7][8][9][10], the acceptance angle limitation of spherical optics at grazing incidence has not been extensively addressed. Improved resolution has been achieved by a combination of up-scaling and increasing grating groove density, but at the expense of sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Novel instruments for ultra-soft X-ray emission spectroscopy

Agåker

Andersson

Englund

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Novel instruments for ultra-soft X-ray emission spectroscopy

Agåker

Andersson

Englund

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

“…SXE spectroscopy was performed with an 800 meV energy resolution. The design and performance of the SXE spectrometer is described in detail elsewhere [9]. First-principles calculations based on the density functional theory with a generalized gradient approximated correction were also performed to evaluate the local density of states of the valence level and the interface structure and properties [10].…”

mentioning

confidence: 99%

Direct observation of site-specific valence electronic structure at theSiO2∕Siinterface

et al. 2006

Self Cite

View full text Add to dashboard Cite

Atom specific valence electronic structures at interface are elucidated successfully using soft x-ray absorption and emission spectroscopy. In order to demonstrate the versatility of this method, we investigated SiO 2 /Si interface as a prototype and directly observed valence electronic states projected at the particular atoms of the SiO 2 /Si interface; local electronic structure strongly depends on the chemical states of each atom. In addition we compared the experimental results with first-principle calculations, which quantitatively revealed the interfacial properties in atomic-scale.Interfaces change atomic structures and chemical compositions of matters, providing not only fascinating physical properties such as metal-insulator transition [1], band gap narrowing [2], and superconductivity [3] but also affecting electronic properties of semiconductor devices [4]. Therefore, observing valence and/or conduction electronic states projected at an individual atom of the interface is in particular important to obtain atom-based picture of physical properties of matters. In spite of many studies on interfaces, the interfacial electronic states have been evaluated mostly as the average and not as individual states. Thus, what we need is a method that allows us to probe atom-specific electronic states at the interfaces directly.Soft X-ray absorption (SXA) spectroscopy [5] is a method to study an excitation from a core level to conduction states, providing an element-specific conduction states. Soft X-ray emission (SXE) spectroscopy [6,7] probes n photon emission process involving a core hole decay process predominantly from valence states to a core level state, which addresses valence states of a particular element. Moreover, since the core electrons are localized to a particular atom we can in an atom-specific way study the valence and conduction states using SXA and SXE spectroscopy. Thus, the selective photo-absorption at interfaces is realized by tuning the incident photon energy to only allow the electronic excitation from a core level to conduction band levels, using SXA. Once the core level at the interfaces is

show abstract

“…XAS at the Mn 2p edge was performed in the total electron yield mode and normalized by the photocurrent from a clean gold mesh. RXES spectra were recorded with a high-resolution grazing-incidence grating Rowland-mount spectrometer in which the energy resolution was set to be 0.7 eV [5]. RXES measurements were carried out with the depolar- ized configuration.…”

Section: Methodsmentioning

confidence: 99%

X-Ray Spectroscopic Studies of A-Site Ordered Perovskite LaMn3B4O12(B=V, Cr)

Mizumaki

Saito

Uozumi

et al. 2012

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

We investigated the electronic structure of LaMn3V4O12 (LMVO) and LaMn3Cr4O12 (LMCO) by X-ray absorption spectroscopy (XAS) and resonant X-ray emission spectroscopy (RXES) measurements around Mn 2p edges. The Mn 2p-XAS spectra showed that the Mn valence is trivalent for LMCO and divalent for LMVO. These results indicate that the A ′ -site can accommodate not only Jahn-Teller ions but also non-Jahn-Teller ions. The Mn 2p-RXES spectra showed the difference of the hybridization between Mn-3d and O-2p orbitals. According to theoretical calculation results, LMCO is candidates for the negative charge transfer energy compound.

show abstract

Design of a Flat Field Spectrometer for Soft X-Ray Emission Spectroscopy

Cited by 42 publications

References 12 publications

Novel instruments for ultra-soft X-ray emission spectroscopy

Novel instruments for ultra-soft X-ray emission spectroscopy

Direct observation of site-specific valence electronic structure at theSiO2∕Siinterface

X-Ray Spectroscopic Studies of <i>A</i>-Site Ordered Perovskite LaMn<sub>3</sub><i>B</i><sub>4</sub>O<sub>12</sub>(<i>B</i>=V, Cr)

Contact Info

Product

Resources

About