Design of 400V class inverter drive using SiC 6-in-1 power module

Shirabe, Kohei; Swamy, Mahesh; Kang, Jeong‐Hyun; Hisatsune, M.; Das, Mrinal K.; Callanan, Robert; Lin, Henry Taisun

doi:10.1109/ecce.2013.6647003

Cited by 21 publications

(23 citation statements)

References 6 publications

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“…As mentioned in the Introduction section, output voltage waveform of SiC based VFD is associated with high dv/dt [9]. In [9], change of gate resistance is shown to reduce dv/dt.…”

Section: Output Sine Wave Filter With High Carrier Frequency Sic mentioning

confidence: 89%

“…In [9], change of gate resistance is shown to reduce dv/dt. Output sine wave filter was also implemented and test results showed good performance [9].…”

Section: Output Sine Wave Filter With High Carrier Frequency Sic mentioning

confidence: 99%

“…In [9], change of gate resistance is shown to reduce dv/dt. Output sine wave filter was also implemented and test results showed good performance [9]. However, no power loss results associated with the output sine wave filter were discussed in [9].…”

Section: Output Sine Wave Filter With High Carrier Frequency Sic mentioning

confidence: 99%

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Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options

Swamy¹,

Kang²,

Shirabe

2015

IEEE Trans. on Ind. Applicat.

Self Cite

127

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SiC devices are gaining acceptance in the motor drive industry. This paper compares the power loss and efficiency between two options that can be used with SiC based Variable Frequency Drives (VFDs). In the first option, the SiC VFD is equipped with an output sine wave filter with carrier frequency at 50 kHz. A dv/dt filter is used for the second option with the carrier frequency reduced to 8 kHz. Both the options are compared with a standard Si IGBT VFD operating at a carrier frequency of 8 kHz with no output filter. The focus of the paper is to present different filtering options for SiC VFDs.The dv/dt filter is designed to meet the same specification as that of the standard Si IGBT VFD with no output filter, so as to present a fair comparison between a standard Si IGBT VFD and the next generation SiC VFD. Results using a 460V, 11kW system, show that the SiC VFD with output sine wave filter has lower efficiency compared to SiC VFD with a dv/dt filter. Influence of the various filtering options on leakage current in the motor drive system has also been studied and the results are presented in this paper.Index Terms: High-speed power semiconductor devices, Filtering options for high speed power switches, dv/dt filter for SiC VFD, Sine filter for SiC VFD, Efficiency comparison between SiC and Si-IGBT VFDs I. 0093-9994 (c)

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“…As mentioned in the Introduction section, output voltage waveform of SiC based VFD is associated with high dv/dt [9]. In [9], change of gate resistance is shown to reduce dv/dt.…”

Section: Output Sine Wave Filter With High Carrier Frequency Sic mentioning

confidence: 89%

“…In [9], change of gate resistance is shown to reduce dv/dt. Output sine wave filter was also implemented and test results showed good performance [9].…”

Section: Output Sine Wave Filter With High Carrier Frequency Sic mentioning

confidence: 99%

See 1 more Smart Citation

Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options

Swamy¹,

Kang²,

Shirabe

2015

IEEE Trans. on Ind. Applicat.

Self Cite

127

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“…[22,23] developed a loss model of SiC, and both the conduction loss and switching loss of SiC are less than that of Si. The efficiency of the inverter based on SiC is 99.1% while Much research involving SiC has been widely conducted by many researchers [1,2,[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Most of the work reflects an enormous effort investigating the switching and conduction losses of SiC [1,9,12,23].…”

Section: Introductionmentioning

confidence: 99%

Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles

2017

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Abstract:The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interfaces, motor drives, etc., in electric vehicles (EVs) benefit from their low resistances, fast switching speed, high temperature tolerance, etc. Such advantages could improve the power density and efficiency of the converter and inverter systems in EVs. Furthermore, the total powertrain system in EVs is also affected by the converter and inverter system based on SiC, especially the capacity of the battery and the overall system efficiency. Therefore, this paper investigates the impact of SiC on the powertrain systems in EVs. First, the characteristics of SiC are evaluated by a double pulse test (DPT). Then, the power losses of the DC/DC converter, DC/AC inverter, and motor are measured. The measured results are assigned into a powertrain model built in the Advanced Vehicle Simulator (ADVISOR) software in order to explore a direct correlation between the SiC and the performance of the powertrain system in EVs, which are then compared with the conventional powertrain system based on silicon (Si). The test and simulation results demonstrate that the efficiency of the overall powertrain is significantly improved and the capacity of the battery can be remarkably reduced if the Si is replaced by SiC in the powertrain system.

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“…This progress has made it possible to fabricate not only discrete SiC-SBDs (Schottky barrier diodes), SiC-JFETs and SiC-MOSFETs but also SiC-MOSFET/SBD modules [15]. Conventional 1.2-kV Si-IGBT/PND modules can be replaced with emerging 1.2-kV SiC-MOSFET/SBD modules, thus leading to higher conversion efficiencies and/or higher switching frequencies [16], [17].…”

Section: Introductionmentioning

confidence: 99%

Bidirectional Isolated Dual-Active-Bridge (DAB) DC-DC Converters Using 1.2-kV 400-A SiC-MOSFET Dual Modules

Akagi¹,

Kinouchi²,

Miyazaki³

2016

CPSS TPEA

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Abstract-This paper describes the 750-Vdc, 100-kW, 20-kHz bidirectional isolated dual-active-bridge (DAB) dcdc converters using four 1.2-kV 400-A SiC-MOSFET dual modules with or without Schottky barrier diodes (SBDs). When no SBD is integrated into each dual module, the conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be 98.0% at the rated-power (100 kW) operation, and the maximum conversion efficiency is as high as 98.8% at 41-kW operation, excluding the gatedrive and control-circuit losses from the total power loss. The bidirectional isolated DAB dc-dc converters are so flexible that series and/or parallel connections of their individual input and output terminals make it easy to expand the voltage and current ratings for various applications such as the so-called "solid-state transformer" or "power electronic transformer." Index Terms-Bidirectional isolated dc-dc converters, conversion efficiency, dual-active-bridge configuration, SiC-MOSFET modules.

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Design of 400V class inverter drive using SiC 6-in-1 power module

Cited by 21 publications

References 6 publications

Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options

Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options

Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles

Bidirectional Isolated Dual-Active-Bridge (DAB) DC-DC Converters Using 1.2-kV 400-A SiC-MOSFET Dual Modules

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