2015
DOI: 10.1109/tia.2015.2420616
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Power Loss, System Efficiency, and Leakage Current Comparison Between Si IGBT VFD and SiC FET VFD With Various Filtering Options

Abstract: SiC devices are gaining acceptance in the motor drive industry. This paper compares the power loss and efficiency between two options that can be used with SiC based Variable Frequency Drives (VFDs). In the first option, the SiC VFD is equipped with an output sine wave filter with carrier frequency at 50 kHz. A dv/dt filter is used for the second option with the carrier frequency reduced to 8 kHz. Both the options are compared with a standard Si IGBT VFD operating at a carrier frequency of 8 kHz with no output… Show more

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Cited by 127 publications
(36 citation statements)
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“…They are especially suitable for petrochemical industry, since there is virtually no risk of electric spark generation or arcing. The main advantages of VFDs are high reliability, high robustness, easy maintenance, long life and low cost (Kozlowski, 2013), (Swamy et al, 2015), (Seggewiss et al, 2015). These are the reasons for electric powertrains to become increasingly popular in the offshore drilling business.…”
Section: Overview On Actuation Systemsmentioning
confidence: 99%
“…They are especially suitable for petrochemical industry, since there is virtually no risk of electric spark generation or arcing. The main advantages of VFDs are high reliability, high robustness, easy maintenance, long life and low cost (Kozlowski, 2013), (Swamy et al, 2015), (Seggewiss et al, 2015). These are the reasons for electric powertrains to become increasingly popular in the offshore drilling business.…”
Section: Overview On Actuation Systemsmentioning
confidence: 99%
“…[22,23] developed a loss model of SiC, and both the conduction loss and switching loss of SiC are less than that of Si. The efficiency of the inverter based on SiC is 99.1% while Much research involving SiC has been widely conducted by many researchers [1,2,[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Most of the work reflects an enormous effort investigating the switching and conduction losses of SiC [1,9,12,23].…”
Section: Introductionmentioning
confidence: 99%
“…With the development of wide band-gap semiconductor technology, the SiC power devices, which are suitable for high frequency switching, are becoming mature. Contrast analyses have been done between the Si and SiC power devices in different applications [14][15][16][17]. The results show that the SiC device has lower losses in different implementations and the advantages are more obvious in high frequency applications.…”
Section: Introductionmentioning
confidence: 99%