Design of 130nm RFCMOS differential low noise amplifier

Muhamad, Mohd Razali; Hussin, H.; Soin, Norhayati

doi:10.11591/ijeecs.v19.i1.pp172-177

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2024

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“…The LNA is one of the basic functional blocks in communications systems. These performances are closely linked to the transistors which constitute it [12]- [16].…”

Section: Introductionmentioning

confidence: 99%

The optimization of a GaN-based current aperture vertical electron transistor

Hadjem,

Kourdi,

Kerai

2024

IJPEDS

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The main objective of this paper is to simulate and optimize a current aperture vertical electron transistor (CAVET) based on gallium nitride (GaN), which combines both a two-dimensional electron gas (2DEG) and a vertical structure using the SILVACO-TCAD simulator. The dimensions of the structure were reduced by 45% to minimize the size and improve the performances of the proposed device; also, a part of aluminum nitride (AlN)was added to the current blocking layer (CBL) to modulate the conduction band profile. The results obtained from the simulation of our structure demonstrated a maximum drain current of 1.8 A/mm, Pinch-off voltage (VP) of -6 V, drain induced barrier lowering (DIBL) of 166 mV/V, maximum transconductance (gm) of 570 mS/mm, gate-leakage of 7.10-7 A, cut-off frequency (ft) of 200 GHz, maximum oscillation frequency (fMax) of 400 GHz. The proposed device exhibited outstanding performance while consuming low power, making it well-suited for use as a low-noise amplifier (LNA) in satellite reception applications.

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“…The LNA is one of the basic functional blocks in communications systems. These performances are closely linked to the transistors which constitute it [12]- [16].…”

Section: Introductionmentioning

confidence: 99%